Lithographic apparatus and device manufacturing method

ABSTRACT

A lithographic apparatus having an optical column capable of projecting a beam on a target portion on a substrate held by the substrate support. The optical column may have a self-emissive contrast device to emit the beam. The optical column may include a projection system to project the beam onto the target portion. The target portion has a height in a scanning direction of the substrate and a tangential width mainly perpendicular to the scanning direction, wherein a scanning speed of the substrate in the scanning direction divided by the height substantially corresponds with a rotating speed of the optical column or a part thereof divided by the tangential width of the target portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is the United States national phase entry of PCT patentapplication no. PCT/EP2011/052408, filed Feb. 18, 2011 (published as PCTPatent Application Publication No. WO 2011/104180), which claims thebenefit of U.S. provisional patent application 61/307,421, filed on Feb.23, 2010 and the benefit of U.S. provisional patent application61/322,482, filed on Apr. 9, 2010, the contents of each of the foregoingdocuments incorporated herein in its entirety by reference.

FIELD

The present invention relates to a lithographic apparatus, aprogrammable patterning device, and a device manufacturing method.

BACKGROUND

A lithographic apparatus is a machine that applies a desired patternonto a substrate or part of a substrate. A lithographic apparatus may beused, for example, in the manufacture of integrated circuits (ICs), flatpanel displays and other devices or structures having fine features. Ina conventional lithographic apparatus, a patterning device, which may bereferred to as a mask or a reticle, may be used to generate a circuitpattern corresponding to an individual layer of the IC, flat paneldisplay, or other device. This pattern may transferred on (part of) thesubstrate (e.g. silicon wafer or a glass plate), e.g. via imaging onto alayer of radiation-sensitive material (resist) provided on thesubstrate.

Instead of a circuit pattern, the patterning device may be used togenerate other patterns, for example a color filter pattern, or a matrixof dots. Instead of a conventional mask, the patterning device maycomprise a patterning array that comprises an array of individuallycontrollable elements that generate the circuit or other applicablepattern. An advantage of such a “maskless” system compared to aconventional mask-based system is that the pattern can be providedand/or changed more quickly and for less cost.

Thus, a maskless system includes a programmable patterning device (e.g.,a spatial light modulator, a contrast device, etc.). The programmablepatterning device is programmed (e.g., electronically or optically) toform the desired patterned beam using the array of individuallycontrollable elements. Types of programmable patterning devices includemicro-mirror arrays, liquid crystal display (LCD) arrays, grating lightvalve arrays, and the like.

SUMMARY

It is desirable, for example, to provide a flexible, low-costlithography apparatus that includes a programmable patterning device.

In an embodiment, a lithographic apparatus is disclosed that includes amodulator configured to expose an exposure area of the substrate to aplurality of beams modulated according to a desired pattern and aprojection system configured to project the modulated beams onto thesubstrate. The modulator may be moveable with respect the exposure areaand/or the projection system may have an array of lenses to receive theplurality of beams, the array of lenses moveable with respect to theexposure area.

In an embodiment, a lithographic apparatus may be provided with, forexample, an optical column capable of creating a pattern onto a targetportion of a substrate. The optical column may be provided with: aself-emissive contrast device configured to emit a beam and a projectionsystem configured to project at least a portion of the beam onto thetarget portion. The apparatus may be provided with an actuator to movethe optical column or a part thereof with respect to the substrate. Byswitching “on” or “off” the self-emissive contrast device during themovement, a pattern on the substrate may be created.

Generally, it is desirable that throughput and/or resolution of alithographic apparatus is continuously improved. The throughputperformance of the lithographic apparatus has to be adapted to theproduction process in which, for instance, flat panel displays or chipsare manufactured. To streamline the production process it is desirablethat the production time of the lithographic apparatus, i.e. the time tocreate a pattern on the whole surface of the substrate, is substantiallyequal, or does not exceed to a great extent the time required for otherstages of the production process.

For some production processes, the production time for each stage of theproduction process is, for instance, limited to 60 seconds. In these 60seconds, a pattern with the desired resolution has to be provided on thecomplete substrate.

Further, the size of substrates to be used in lithographic processes iscontinuously increasing. So, within the same production time, thegreater substrate surface of such a larger substrate should be providedwith a pattern; larger substrates can more efficiently be processed inother stages of the production process. Also, there is a demand forlarger substrates in the market, for instance larger panel displays forthe production of large flat screen TV's or computer monitors.

An increasing size of substrates and/or an increasing resolution of thepattern provided on the substrate generally requires an increase in theefficiency of the lithographic process.

It is desirable, for example, to provide a lithographic apparatus whichis capable of efficiently creating a pattern on a substrate. It isdesirable, for example, to provide a method of decreasing the relativeexposure time of a substrate, i.e. the exposure time divided by thelength of a substrate in such a lithographic apparatus.

According to an embodiment of the invention, there is provided anapparatus comprising:

an optical column capable of projecting a beam on a target portion of asubstrate, the optical column comprising a projection system configuredto project the beam onto the target portion;

a scanning movement actuator to move the substrate with a scanning speedin a scanning direction with respect to the optical column; and

a rotating movement actuator to rotate the optical column or a partthereof with a rotating frequency resulting in a tangential rotationspeed of the beam on the target portion,

wherein the target portion has a height in the scanning direction and atangential width mainly perpendicular to the scanning direction, whereinthe scanning speed divided by the height substantially corresponds withthe rotation speed of the beam divided by the tangential width.

According to an embodiment of the invention, there is provided a methodof decreasing an exposure time divided by a substrate length in theabove lithographic apparatus, the method comprising one or more selectedfrom the following:

increasing the number of self-emissive contrast devices per opticalcolumn,

increasing the radius of the central axis of the optical column on therotatable part,

increasing the rotating frequency of the rotatable part,

decreasing the width of a target portion,

minimizing the distance between a plurality of optical columns in thescanning direction, and

decreasing the width of a target portion in the tangential direction.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate an embodiment of the present inventionand, together with the description, further serve to explain theprinciples of the invention and to enable a person skilled in thepertinent art to make and use the invention. In the drawings, likereference numbers may indicate identical or functionally similarelements.

FIG. 1 depicts a schematic side view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 2 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 3 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 4 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 5 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the present invention.

FIGS. 6(A)-(D) depict schematic top views and a side view of a part of alithographic apparatus according to an embodiment of the presentinvention.

FIGS. 7(A)-(O) depict schematic top and side views of a part of alithographic apparatus according to an embodiment of the presentinvention.

FIG. 7(P) depicts a power/forward current graph of an individuallyaddressable element according to an embodiment of the present invention.

FIG. 8 depicts a schematic side view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 9 depicts a schematic side view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 10 depicts a schematic side view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 11 depicts a schematic top view of an array of individuallycontrollable elements for a lithographic apparatus according to anembodiment of the present invention.

FIG. 12 depicts a mode of transferring a pattern to a substrate using anembodiment of the invention.

FIG. 13 depicts a schematic arrangement of optical engines.

FIGS. 14(A) and (B) depict schematic side views of a part of alithographic apparatus according to an embodiment of the presentinvention.

FIG. 15 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 16(A) depicts a schematic side view of a part of a lithographicapparatus according to an embodiment of the present invention.

FIG. 16(B) depicts a schematic position of a detection region of asensor relative to a substrate.

FIG. 17 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the present invention.

FIG. 18 depicts a schematic cross-sectional side view of a lithographicapparatus according to an embodiment of the invention.

FIG. 19 depicts a schematic top view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention.

FIG. 20 depicts a schematic three-dimensional drawing of a portion ofthe lithographic apparatus of FIG. 19.

FIG. 21 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing three different rotation positions of an optical element 242 setwith respect to an individually controllable element.

FIG. 22 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing three different rotation positions of an optical element 242 setwith respect to an individually controllable element.

FIG. 23 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing five different rotation positions of an optical element 242 setwith respect to an individually controllable element.

FIG. 24 depicts a schematic layout of a portion of the individuallycontrollable elements 102 if standard laser diodes are used with adiameter of 5.6 mm to obtain full coverage across the width of thesubstrate.

FIG. 25 depicts a schematic layout of a detail of FIG. 24.

FIG. 26 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention.

FIG. 27 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention.

FIG. 28 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing five different rotation positions of an optical element 242 setwith respect to an individually controllable element.

FIG. 29 depicts a schematic three-dimensional drawing of a portion ofthe lithographic apparatus of FIG. 28.

FIG. 30 depicts schematically an arrangement of 8 lines being writtensimultaneously by a single movable optical element 242 set of FIGS. 28and 29.

FIG. 31 depicts a schematic arrangement to control focus with a movingrooftop in the arrangement of FIGS. 28 and 29.

FIG. 32 depicts a schematic cross-sectional side view of a lithographicapparatus according to an embodiment of the invention havingindividually controllable elements substantially stationary in the X-Yplane and an optical element movable with respect thereto according toan embodiment of the invention.

FIG. 33 depicts a part of a lithographic apparatus according to anembodiment of the invention.

FIG. 34 depicts a top view of the lithographic apparatus of FIG. 33according to an embodiment of the invention.

FIG. 35 depicts schematically a number of target portions projected orto be projected on a substrate according to an embodiment of theinvention.

DETAILED DESCRIPTION

One or more embodiments of a maskless lithographic apparatus, a masklesslithographic method, a programmable patterning device and otherapparatus, articles of manufacture and methods are described herein. Inan embodiment, a low cost and/or flexible maskless lithographicapparatus is provided. As it is maskless, no conventional mask is neededto expose, for example, ICs or flat panel displays. Similarly, one ormore rings are not needed for packaging applications; the programmablepatterning device can provide digital edge-processing “rings” forpackaging applications to avoid edge projection. Maskless (digitalpatterning) can enable use with flexible substrates.

In an embodiment, the lithographic apparatus is capable ofsuper-non-critical applications. In an embodiment, the lithographicapparatus is capable of ≧0.1 μm resolution, e.g. ≧0.5 μm resolution or≧1 μm resolution. In an embodiment, the lithographic apparatus iscapable of ≦20 μm resolution, e.g. ≦10 μm resolution, or ≦5 μmresolution. In an embodiment, the lithographic apparatus is capable of˜0.1-10 μm resolution. In an embodiment, the lithographic apparatus iscapable of ≧50 nm overlay, e.g. ≧100 nm overlay, ≧200 nm overlay, or≧300 nm overlay. In an embodiment, the lithographic apparatus is capableof ≦500 nm overlay, e.g. ≦400 nm overlay, ≦300 nm overlay, or ≦200 nmoverlay. These overlay and resolution values may be regardless ofsubstrate size and material.

In an embodiment, the lithographic apparatus is highly flexible. In anembodiment, the lithographic apparatus is scalable to substrates ofdifferent sizes, types and characteristics. In an embodiment, thelithographic apparatus has a virtually unlimited field size. Thus, thelithographic apparatus can enable multiple applications (e.g., IC, flatpanel display, packaging, etc.) with a single lithographic apparatus orusing multiple lithographic apparatus using a largely commonlithographic apparatus platform. In an embodiment, the lithographicapparatus allows automated job generation to provide for flexiblemanufacture. In an embodiment, the lithographic apparatus provides 3Dintegration.

In an embodiment, the lithographic apparatus is low cost. In anembodiment, only common off-the-shelf components are used (e.g.,radiation emitting diodes, a simple movable substrate holder, and a lensarray). In an embodiment, pixel-grid imaging is used to enable simpleprojection optics. In an embodiment, a substrate holder having a singlescan direction is used to reduce cost and/or reduce complexity.

FIG. 1 schematically depicts a lithographic projection apparatus 100according to an embodiment of the invention. Apparatus 100 includes apatterning device 104, an object holder 106 (e.g., an object table, forinstance a substrate table), and a projection system 108.

In an embodiment, the patterning device 104 comprises a plurality ofindividually controllable elements 102 to modulate radiation to apply apattern to beam 110. In an embodiment, the position of the plurality ofindividually controllable elements 102 can be fixed relative toprojection system 108. However, in an alternative arrangement, aplurality of individually controllable elements 102 may be connected toa positioning device (not shown) to accurately position one or more ofthem in accordance with certain parameters (e.g., with respect toprojection system 108).

In an embodiment, the patterning device 104 is a self-emissive contrastdevice. Such a patterning device 104 obviates the need for a radiationsystem, which can reduce, for example, cost and size of the lithographicapparatus. For example, each of the individually controllable elements102 is a radiation emitting diode, such a light emitting diode (LED), anorganic LED (OLED), a polymer LED (PLED), or a laser diode (e.g., solidstate laser diode). In an embodiment, each of the individuallycontrollable elements 102 is a laser diode. In an embodiment, each ofthe individually controllable elements 102 is a blue-violet laser diode(e.g., Sanyo model no. DL-3146-151). Such diodes are supplied bycompanies such as Sanyo, Nichia, Osram, and Nitride. In an embodiment,the diode emits radiation having a wavelength of about 365 nm or about405 nm. In an embodiment, the diode can provide an output power selectedfrom the range of 0.5-100 mW. In an embodiment, the size of laser diode(naked die) is selected from the range of 250-600 micrometers. In anembodiment, the laser diode has an emission area selected from the rangeof 1-5 micrometers. In an embodiment, the laser diode has a divergenceangle selected from the range of 7-44 degrees. In an embodiment, thepatterning device 104 has about 1×10⁵ diodes having a configuration(e.g., emission area, divergence angle, output power, etc.) to provide atotal brightness more than or equal to about 6.4×10⁸ W/(m²·sr).

In an embodiment, the self-emissive contrast device comprises moreindividually addressable elements 102 than needed to allow a “redundant”individually controllable element 102 to be used if another individuallycontrollable element 102 fails to operate or doesn't operate properly.In an embodiment, redundant individually controllable elements may beused advantageously in an embodiment using movable individuallycontrollable elements 102 as discussed, for example, with respect toFIG. 5 below.

In an embodiment, the individually controllable elements 102 of aself-emissive contrast device are operated in the steep part of thepower/forward current curve of the individually controllable elements102 (e.g., a laser diode). This may be more efficient and lead to lesspower consumption/heat. In an embodiment, the optical output perindividually controllable element, when in use, is at least 1 mW, e.g.at least 10 mW, at least 25 mW, at least 50 mW, at least 100 mW, or atleast 200 mW. In an embodiment, the optical output per individuallycontrollable element, when in use, is less than 300 mW, less than 250mW, less than 200 mW, less than 150 mW, less than 100 mW, less than 50mW, less than 25 mW, or less than 10 mW. In an embodiment, the powerconsumption per programmable patterning device, when in use, to operatethe individually controllable elements is less than 10 kW, e.g. lessthan 5 kW, less than 1 kW, or less than 0.5 kW. In an embodiment, thepower consumption per programmable patterning device, when in use, tooperate the individually controllable elements is at least 100 W, e.g.at least 300 W, at least 500 W, or at least 1 kW.

The lithographic apparatus 100 comprises an object holder 106. In thisembodiment, the object holder comprises an object table 106 to hold asubstrate 114 (e.g., a resist-coated silicon wafer or glass substrate).The object table 106 may be movable and be connected to a positioningdevice 116 to accurately position substrate 114 in accordance withcertain parameters. For example, positioning device 116 may accuratelyposition substrate 114 with respect to projection system 108 and/or thepatterning device 104. In an embodiment, movement of object table 106may be realized with a positioning device 116 comprising a long-strokemodule (coarse positioning) and optionally a short-stroke module (finepositioning), which are not explicitly depicted in FIG. 1. In anembodiment, the apparatus is absent at least a short stroke module tomove the object table 106. A similar system may be used to position theindividually controllable elements 102. It will be appreciated that beam110 may alternatively/additionally be moveable, while the object table106 and/or the individually controllable elements 102 may have a fixedposition to provide the required relative movement. Such an arrangementmay assist in limiting the size of the apparatus. In an embodiment,which may e.g. be applicable in the manufacture of flat panel displays,the object table 106 may be stationary and positioning device 116 isconfigured to move substrate 114 relative to (e.g., over) object table106. For example, the object table 106 may be provided with a system toscan the substrate 114 across it at a substantially constant velocity.Where this is done, object table 106 may be provided with a multitude ofopenings on a flat uppermost surface, gas being fed through the openingsto provide a gas cushion which is capable of supporting substrate 114.This is conventionally referred to as a gas bearing arrangement.Substrate 114 is moved over object table 106 using one or more actuators(not shown), which are capable of accurately positioning substrate 114with respect to the path of beam 110. Alternatively, substrate 114 maybe moved with respect to the object table 106 by selectively startingand stopping the passage of gas through the openings. In an embodiment,the object holder 106 can be a roll system onto which a substrate isrolled and positioning device 116 may be a motor to turn the roll systemto provide the substrate onto an object table 106.

Projection system 108 (e.g., a quartz and/or CaF₂ lens system or acatadioptric system comprising lens elements made from such materials,or a mirror system) can be used to project the patterned beam modulatedby the individually controllable elements 102 onto a target portion 120(e.g., one or more dies) of substrate 114. Projection system 108 mayproject image the pattern provided by the plurality of individuallycontrollable elements 102 such that the pattern is coherently formed onthe substrate 114. Alternatively, projection system 108 may projectimages of secondary sources for which the elements of the plurality ofindividually controllable elements 102 act as shutters.

In this respect, the projection system may comprise a focusing element,or a plurality of focusing elements (herein referred to generically as alens array) e.g., a micro-lens array (known as an MLA) or a Fresnel lensarray, e.g. to form the secondary sources and to image spots onto thesubstrate 114. In an embodiment, the lens array (e.g., MLA) comprises atleast 10 focusing elements, e.g. at least 100 focusing elements, atleast 1,000 focusing elements, at least 10,000 focusing elements, atleast 100,000 focusing elements, or at least 1,000,000 focusingelements. In an embodiment, the number of individually controllableelements in the patterning device is equal to or greater than the numberof focusing elements in the lens array. In an embodiment, the lens arraycomprises a focusing element that is optically associated with one ormore of the individually controllable elements in the array ofindividually controllable elements, e.g. with only one of theindividually controllable elements in the array of individuallycontrollable elements, or with 2 or more of the individuallycontrollable elements in the array of individually controllableelements, e.g., 3 or more, 5 or more, 10 or more, 20 or more, 25 ormore, 35 or more, or 50 or more; in an embodiment, the focusing elementis optically associated with less than 5,000 individually controllableelements, e.g. less than 2,500, less than 1,000, less than 500, or lessthan 100. In an embodiment, the lens array comprises more than onefocusing element (e.g. more than 1,000, the majority, or about all) thatis optically associated with one or more of the individuallycontrollable elements in the array of individually controllableelements.

In an embodiment, the lens array is movable at least in the direction toand away from the substrate, e.g. with the use of one or more actuators.Being able to move the lens array to and away from the substrate allows,e.g., for focus adjustment without having to move the substrate. In anembodiment, individual lens element in the lens array, for instance eachindividual lens element in the lens array, are movable at least in thedirection to and away from the substrate (e.g. for local focusadjustments on non-flat substrates or to bring each optical column intothe same focus distance).

In an embodiment, the lens array comprises plastic focusing elements(which may be easy to make, e.g. injection molding, and/or affordable),where, for example, the wavelength of the radiation is greater than orequal to about 400 nm (e.g. 405 nm). In an embodiment, the wavelength ofthe radiation is selected from the range of about 400 nm-500 nm. In anembodiment, the lens array comprises quartz focusing elements. In anembodiment, each or a plurality of the focusing elements may be anasymmetrical lens. The asymmetry may be the same for each of theplurality of focusing elements or may be different for one or morefocusing elements of a plurality of focusing elements than for one ormore different focusing elements of a plurality of focusing elements. Anasymmetrical lens may facilitate converting an oval radiation outputinto a circular projected spot, or vice versa.

In an embodiment, the focusing element has a high numerical aperture(NA) that is arranged to project radiation onto the substrate out of thefocal point to obtain low NA for system. A higher NA lens may be moreeconomic, prevalent and/or better quality than an available low NA lens.In an embodiment, low NA is less than or equal to 0.3, in an embodiment0.18, 0.15 or less. Accordingly, a higher NA lens has a NA greater thanthe design NA for the system, for example, greater than 0.3, greaterthan 0.18, or greater than 0.15.

While, in an embodiment, the projection system 108 is separate from thepatterning device 104, it need not be. The projection system 108 may beintegral with the patterning device 108. For example, a lens array blockor plate may be attached to (integral with) with a patterning device104. In an embodiment, the lens array may be in the form of individualspatially separated lenslets, each lenslet attached to (integral with)with an individually addressable element of the patterning device 104 asdiscussed in more detail below.

Optionally, the lithographic apparatus may comprise a radiation systemto supply radiation (e.g., ultraviolet (UV) radiation) to the pluralityof individually controllable elements 102. If the patterning device is aradiation source itself, e.g. a laser diode array or a LED array, thelithographic apparatus may be designed without a radiation system, i.e.without a radiation source other than the patterning device itself, orat least a simplified radiation system.

The radiation system includes an illumination system (illuminator)configured to receive radiation from a radiation source. Theillumination system includes one or more of the following elements: aradiation delivery system (e.g., suitable directing mirrors), aradiation conditioning device (e.g., a beam expander), an adjustingdevice to set the angular intensity distribution of the radiation(generally, at least the outer and/or inner radial extent (commonlyreferred to as σ-outer and σ-inner, respectively) of the intensitydistribution in a pupil plane of the illuminator can be adjusted), anintegrator, and/or a condenser. The illumination system may be used tocondition the radiation that will be provided to the individuallycontrollable elements 102 to have a desired uniformity and intensitydistribution in its cross-section. The illumination system may bearranged to divide radiation into a plurality of sub-beams that may, forexample, each be associated with one or more of the plurality of theindividually controllable elements. A two-dimensional diffractiongrating may, for example, be used to divide the radiation intosub-beams. In the present description, the terms “beam of radiation” and“radiation beam” encompass, but are not limited to, the situation inwhich the beam is comprised of a plurality of such sub-beams ofradiation.

The radiation system may also include a radiation source (e.g., anexcimer laser) to produce the radiation for supply to or by theplurality of individually controllable elements 102. The radiationsource and the lithographic apparatus 100 may be separate entities, forexample when the radiation source is an excimer laser. In such cases,the radiation source is not considered to form part of the lithographicapparatus 100 and the radiation is passed from the source to theilluminator. In other cases the radiation source may be an integral partof the lithographic apparatus 100, for example when the source is amercury lamp. It is to be appreciated that both of these scenarios arecontemplated within the scope of the present invention.

In an embodiment, the radiation source, which in an embodiment may bethe plurality of individually controllable elements 102, can provideradiation having a wavelength of at least 5 nm, e.g. at least 10 nm, atleast 50 nm, at least 100 nm, at least 150 nm, at least 175 nm, at least200 nm, at least 250 nm, at least 275 nm, at least 300 nm, at least 325nm, at least 350 nm, or at least 360 nm. In an embodiment, the radiationhas a wavelength of at most 450 nm, e.g. at most 425 nm, at most 375 nm,at most 360 nm, at most 325 nm, at most 275 nm, at most 250 nm, at most225 nm, at most 200 nm, or at most 175 nm. In an embodiment, theradiation has a wavelength including 436 nm, 405 nm, 365 nm, 355 nm, 248nm, 193 nm, 157 nm, 126 nm, and/or 13.5 nm. In an embodiment, theradiation includes a wavelength of around 365 nm or around 355 nm. In anembodiment, the radiation includes a broad band of wavelengths, forexample encompassing 365 nm, 405 nm and 436 nm. A 355 nm laser sourcecould be used. In an embodiment, the radiation has a wavelength of about405 nm.

In an embodiment, radiation is directed from the illumination system atthe patterning device 104 at an angle between 0 and 90°, e.g. between 5and 85°, between 15 and 75°, between 25 and 65°, or between 35 and 55°.The radiation from the illumination system may be provided directly tothe patterning device 104. In an alternative embodiment, radiation maybe directed from the illumination system to the patterning device 104 bymeans of a beam splitter (not shown) configured such that the radiationis initially reflected by the beam splitter and directed to thepatterning device 104. The patterning device 104 modulates the beam andreflects it back to the beam splitter which transmits the modulated beamtoward the substrate 114. It will be appreciated, however, thatalternative arrangements may be used to direct radiation to thepatterning device 104 and subsequently to the substrate 114. Inparticular, an illumination system arrangement may not be required if atransmissive patterning device 104 (e.g. a LCD array) is used or thepatterning device 104 is self-emissive (e.g., a plurality of diodes).

In operation of the lithographic apparatus 100, where the patterningdevice 104 is not radiation emissive (e.g., comprising LEDs), radiationis incident on the patterning device 104 (e.g., a plurality ofindividually controllable elements) from a radiation system(illumination system and/or radiation source) and is modulated by thepatterning device 104. The patterned beam 110, after having been createdby the plurality of individually controllable elements 102, passesthrough projection system 108, which focuses beam 110 onto a targetportion 120 of the substrate 114.

With the aid of positioning device 116 (and optionally a position sensor134 on a base 136 (e.g., an interferometric measuring device thatreceives an interferometric beam 138, a linear encoder or a capacitivesensor)), substrate 114 can be moved accurately, e.g., so as to positiondifferent target portions 120 in the path of beam 110. Where used, thepositioning device for the plurality of individually controllableelements 102 can be used to accurately correct the position of theplurality of individually controllable elements 102 with respect to thepath of beam 110, e.g., during a scan.

Although lithography apparatus 100 according to an embodiment of theinvention is herein described as being for exposing a resist on asubstrate, it will be appreciated that apparatus 100 may be used toproject a patterned beam 110 for use in resistless lithography.

As here depicted, the lithographic apparatus 100 is of a reflective type(e.g. employing reflective individually controllable elements).Alternatively, the apparatus may be of a transmissive type (e.g.employing transmissive individually controllable elements).

The depicted apparatus 100 can be used in one or more modes e.g.:

1. In step mode, the individually controllable elements 102 and thesubstrate 114 are kept essentially stationary, while an entire patternedradiation beam 110 is projected onto a target portion 120 at one go(i.e. a single static exposure). The substrate 114 is then shifted inthe X- and/or Y-direction so that a different target portion 120 can beexposed to the patterned radiation beam 110. In step mode, the maximumsize of the exposure field limits the size of the target portion 120imaged in a single static exposure.

2. In scan mode, the individually controllable elements 102 and thesubstrate 114 are scanned synchronously while a pattern radiation beam110 is projected onto a target portion 120 (i.e. a single dynamicexposure). The velocity and direction of the substrate relative to theindividually controllable elements may be determined by the (de-)magnification and image reversal characteristics of the projectionsystem PS. In scan mode, the maximum size of the exposure field limitsthe width (in the non-scanning direction) of the target portion in asingle dynamic exposure, whereas the length of the scanning motiondetermines the height (in the scanning direction) of the target portion.

3. In pulse mode, the individually controllable elements 102 are keptessentially stationary and the entire pattern is projected onto a targetportion 120 of the substrate 114 using pulsing (e.g., provided by apulsed radiation source or by pulsing the individually controllableelements). The substrate 114 is moved with an essentially constant speedsuch that the patterned beam 110 is caused to scan a line across thesubstrate 114. The pattern provided by the individually controllableelements is updated as required between pulses and the pulses are timedsuch that successive target portions 120 are exposed at the requiredlocations on the substrate 114. Consequently, patterned beam 110 canscan across the substrate 114 to expose the complete pattern for a stripof the substrate 114. The process is repeated until the completesubstrate 114 has been exposed line by line.

4. In continuous scan mode, essentially the same as pulse mode exceptthat the substrate 114 is scanned relative to the modulated beam ofradiation B at a substantially constant speed and the pattern on thearray of individually controllable elements is updated as the patternedbeam 110 scans across the substrate 114 and exposes it. A substantiallyconstant radiation source or a pulsed radiation source, synchronized tothe updating of the pattern on the array of individually controllableelements may be used.

Combinations and/or variations on the above described modes of use orentirely different modes of use may also be employed.

FIG. 2 depicts schematic top view of a lithographic apparatus accordingto an embodiment of the invention for use with wafers (e.g., 300 mmwafers). As shown in FIG. 2, the lithographic apparatus 100 comprises asubstrate table 106 to hold a wafer 114. Associated with the substratetable 106 is a positioning device 116 to move the substrate table 106 inat least the X-direction. Optionally, the positioning device 116 maymove the substrate table 106 in the Y-direction and/or Z-direction. Thepositioning device 116 may also rotate the substrate table 106 about theX-, Y- and/or Z-directions. Accordingly, the positioning device 116 mayprovide motion in up to 6 degrees of freedom. In an embodiment, thesubstrate table 106 provides motion only in the X-direction, anadvantage of which is lower costs and less complexity. In an embodiment,the substrate table 106 comprises relay optics.

The lithographic apparatus 100 further comprises a plurality ofindividually addressable elements 102 arranged on a frame 160. Frame 160may be mechanically isolated from the substrate table 106 and itspositioning device 116. Mechanical isolation may be provided, forexample, by connecting the frame 160 to ground or a firm base separatelyfrom the frame for the substrate table 106 and/or its positioning device116. In addition or alternatively, dampers may be provided between frame160 and the structure to which it is connected, whether that structureis ground, a firm base or a frame supporting the substrate table 106and/or its positioning device 116.

In this embodiment, each of the individually addressable elements 102 isa radiation emitting diode, e.g., a blue-violet laser diode. As shown inFIG. 2, the individually addressable elements 102 may be arranged intoat least 3 separate arrays of individually addressable elements 102extending along the Y-direction. In an embodiment, an array ofindividually addressable elements 102 is staggered in the X-directionfrom an adjacent array of individually addressable elements 102. Thelithographic apparatus 100, particularly the individually addressableelements 102, may be arranged to provide pixel-grid imaging as describedin more detail herein.

Each of the arrays of individually addressable elements 102 may be partof an individual optical engine component, which may be manufactured asa unit for easy replication. Moreover, frame 160 may be configured to beexpandable and configurable to easily adopt any number of such opticalengine components. The optical engine component may comprise acombination of an array of individually addressable elements 102 andlens array 170 (see, e.g., FIG. 8). For example, in FIG. 2, there aredepicted 3 optical engine components (with an associated lens array 170below each respective array of individually addressable elements 102).Accordingly, in an embodiment, a multi-column optical arrangement may beprovided, with each optical engine forming a column.

Further, the lithographic apparatus 100 comprises an alignment sensor150. The alignment sensor is used to determine alignment between theindividually addressable elements 102 and the substrate 114 beforeand/or during exposure of the substrate 114. The results of thealignment sensor 150 can be used by a controller of the lithographicapparatus 100 to control, for example, the positioning device 116 toposition the substrate table 106 to improve alignment. In addition oralternatively, the controller may control, for example, a positioningdevice associated with the individually addressable elements 102 toposition one or more of the individually addressable elements 102 toimprove alignment. In an embodiment, the alignment sensor 150 mayinclude pattern recognition functionality/software to perform alignment.

The lithographic apparatus 100, in addition or alternatively, comprisesa level sensor 150. The level sensor 150 is used to determine whetherthe substrate 106 is level with respect to the projection of the patternfrom the individually addressable elements 102. The level sensor 150 candetermine level before and/or during exposure of the substrate 114. Theresults of the level sensor 150 can be used by a controller of thelithographic apparatus 100 to control, for example, the positioningdevice 116 to position the substrate table 106 to improve leveling. Inaddition or alternatively, the controller may control, for example, apositioning device associated with a projection system 108 (e.g., a lensarray) to position an element of the projection system 108 (e.g., a lensarray) to improve leveling. In an embodiment, the level sensor mayoperate by projecting an ultrasonic beam at the substrate 106 and/oroperate by projecting an electromagnetic beam of radiation at thesubstrate 106.

In an embodiment, results from the alignment sensor and/or the levelsensor may be used to alter the pattern provided by the individuallyaddressable elements 102. The pattern may be altered to correct, forexample, distortion, which may arise from, e.g., optics (if any) betweenthe individually addressable elements 102 and the substrate 114,irregularities in the positioning of the substrate 114, unevenness ofthe substrate 114, etc. Thus, results from the alignment sensor and/orthe level sensor can be used to alter the projected pattern to effect anon-linear distortion correction. Non-linear distortion correction maybe useful, for example, for flexible displays, which may not haveconsistent linear or non-linear distortion.

In operation of the lithographic apparatus 100, a substrate 114 isloaded onto the substrate table 106 using, for example, a robot handler(not shown). The substrate 114 is then displaced in the X-directionunder the frame 160 and the individually addressable elements 102. Thesubstrate 114 is measured by the level sensor and/or the alignmentsensor 150 and then is exposed to a pattern using individuallyaddressable elements 102. For example, the substrate 114 is scannedthrough the focal plane (image plane) of the projection system 108,while the sub-beams, and hence the image spots S (see, e.g., FIG. 12),are switched at least partially ON or fully ON or OFF by the patterningdevice 104. Features corresponding to the pattern of the patterningdevice 104 are formed on the substrate 114. The individually addressableelements 102 may be operated, for example, to provide pixel-grid imagingas discussed herein.

In an embodiment, the substrate 114 may be scanned completely in thepositive X direction and then scanned completely in the negative Xdirection. In such an embodiment, an additional level sensor and/oralignment sensor 150 on the opposite side of the individuallyaddressable elements 102 may be required for the negative X directionscan.

FIG. 3 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the invention for exposing substrates inthe manufacture of, for instance, flat panel displays (e.g., LCDs, OLEDdisplays, etc.). Like the lithographic apparatus 100 shown in FIG. 2,the lithographic apparatus 100 comprises a substrate table 106 to hold aflat panel display substrate 114, a positioning device 116 to move thesubstrate table 106 in up to 6 degrees of freedom, an alignment sensor150 to determine alignment between the individually addressable elements102 and the substrate 114, and a level sensor 150 to determine whetherthe substrate 114 is level with respect to the projection of the patternfrom the individually addressable elements 102.

The lithographic apparatus 100 further comprises a plurality ofindividually addressable elements 102 arranged on a frame 160. In thisembodiment, each of the individually addressable elements 102 is aradiation emitting diode, e.g., a blue-violet laser diode. As shown inFIG. 3, the individually addressable elements 102 are arranged into anumber (e.g., at least 8) of stationary separate arrays of individuallyaddressable elements 102 extending along the Y-direction. In anembodiment, the arrays are substantially stationary, i.e., they do notmove significantly during projection. Further, in an embodiment, anumber of the arrays of individually addressable elements 102 arestaggered in the X-direction from adjacent array of individuallyaddressable elements 102 in an alternating fashion. The lithographicapparatus 100, particularly the individually addressable elements 102,may be arranged to provide pixel-grid imaging.

In operation of the lithographic apparatus 100, a panel displaysubstrate 114 is loaded onto the substrate table 106 using, for example,a robot handler (not shown). The substrate 114 is then displaced in theX-direction under the frame 160 and the individually addressableelements 102. The substrate 114 is measured by the level sensor and/orthe alignment sensor 150 and then is exposed to a pattern usingindividually addressable elements 102. The individually addressableelements 102 may be operated, for example, to provide pixel-grid imagingas discussed herein.

FIG. 4 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the invention for use with roll-to-rollflexible displays/electronics. Like the lithographic apparatus 100 shownin FIG. 3, the lithographic apparatus 100 comprises a plurality ofindividually addressable elements 102 arranged on a frame 160. In thisembodiment, each of the individually addressable elements 102 is aradiation emitting diode, e.g., a blue-violet laser diode. Further, thelithographic apparatus comprises an alignment sensor 150 to determinealignment between the individually addressable elements 102 and thesubstrate 114, and a level sensor 150 to determine whether the substrate114 is level with respect to the projection of the pattern from theindividually addressable elements 102.

The lithographic apparatus may also comprise an object holder having anobject table 106 over which a substrate 114 is moved. The substrate 114is flexible and is rolled onto a roll connected to positioning device116, which may be a motor to turn the roll. In an embodiment, thesubstrate 114 may, in addition or alternatively, be rolled from a rollconnected to positioning device 116, which may be a motor to turn theroll. In an embodiment, there are at least two rolls, one from which thesubstrate is rolled and another onto which the substrate is rolled. Inan embodiment, object table 106 need not be provided if, for example,substrate 114 is stiff enough between the rolls. In such a case, therewould still be an object holder, e.g., one or more rolls. In anembodiment, the lithographic apparatus can provide substratecarrier-less (e.g., carrier-less-foil (CLF)) and/or roll to rollmanufacturing. In an embodiment, the lithographic apparatus can providesheet to sheet manufacturing.

In operation of the lithographic apparatus 100, flexible substrate 114is rolled onto, and/or from a roll, in the X-direction under the frame160 and the individually addressable elements 102. The substrate 114 ismeasured by the level sensor and/or the alignment sensor 150 and then isexposed to a pattern using individually addressable elements 102. Theindividually addressable elements 102 may be operated, for example, toprovide pixel-grid imaging as discussed herein.

FIG. 5 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the invention having movable individuallyaddressable elements 102. Like the lithographic apparatus 100 shown inFIG. 2, the lithographic apparatus 100 comprises a substrate table 106to hold a substrate 114, a positioning device 116 to move the substratetable 106 in up to 6 degrees of freedom, an alignment sensor 150 todetermine alignment between the individually addressable elements 102and the substrate 114, and a level sensor 150 to determine whether thesubstrate 114 is level with respect to the projection of the patternfrom the individually addressable elements 102.

The lithographic apparatus 100 further comprises a plurality ofindividually addressable elements 102 arranged on a frame 160. In thisembodiment, each of the individually addressable elements 102 is aradiation emitting diode, e.g., a laser diode, for instance ablue-violet laser diode. As shown in FIG. 5, the individuallyaddressable elements 102 are arranged into a number of separate arrays200 of individually addressable elements 102 extending along theY-direction. Further, in an embodiment, a number of the arrays 200 ofindividually addressable elements 102 are staggered in the X-directionfrom an adjacent array 200 of individually addressable elements 102 inan alternating fashion. The lithographic apparatus 100, particularly theindividually addressable elements 102, may be arranged to providepixel-grid imaging. However, in an embodiment, the lithographicapparatus 100 need not provide pixel-grid imaging. Rather, thelithographic apparatus 100 may project the radiation of the diodes ontothe substrate in a manner that does not form individual pixels forprojection onto the substrate but rather a substantially continuousimage for projection onto the substrate.

In an embodiment, one or more of the plurality of individuallyaddressable elements 102 are movable between an exposure region whereinthe one or more individually addressable elements are used to projectall or part of the beam 110, and a location outside of the exposureregion wherein the one or more individually addressable elements do notproject any of the beam 110. In an embodiment, the one or moreindividually addressable elements 102 are radiation emitting devicesthat are turned ON or at least partly ON, i.e., they emit radiation, inthe exposure region 204 (the light shaded region in FIG. 5) and areturned OFF, i.e., they do not emit radiation, when located outside ofthe exposure region 204.

In an embodiment, the one or more individually addressable elements 102are radiation emitting devices that may be turned ON in the exposureregion 204 and outside of the exposure region 204. In such acircumstance, one or more individually addressable elements 102 may beturned on outside of the exposure region 204 to provide a compensatingexposure if, for example, the radiation was not properly projected inthe exposure region 204 by one or more individually addressable elements102. For example, referring to FIG. 5, one or more of the individuallyaddressable elements 102 of an array opposite to the exposure region 204may be turned ON to correct for a failed or improper radiationprojection in the exposure region 204.

In an embodiment, the exposure region 204 is an elongate line. In anembodiment, the exposure region 204 is a single dimensional array of oneor more individually addressable elements 102. In an embodiment, theexposure region 204 is a two dimensional array of one or moreindividually addressable elements 102. In an embodiment, the exposureregion 204 is elongate.

In an embodiment, each of the movable individually addressable elements102 may be movable separately and not necessarily together as a unit.

In an embodiment, the one or more individually addressable elements aremovable, and in use move, in a direction transverse to a direction ofpropagation of the beam 110 at least during projection of the beam 110.For example, in an embodiment, the one or more individually addressableelements 102 are radiation emitting devices that move in a directionsubstantially perpendicular to a direction of propagation of the beam110 during projection of the beam 110.

In an embodiment, each of the arrays 200 is a laterally displaceableplate having a plurality of spatially separated individually addressableelements 102 arranged along the plate as shown in FIG. 6. In use, eachplate translates along direction 208. In use, the motion of theindividually addressable elements 102 are appropriately timed to belocated in the exposure region 204 (shown as the dark shaded region inFIG. 6) so as to project all or part of the beam 110. For example, in anembodiment, the one or more individually addressable elements 102 areradiation emitting devices and the turning ON or OFF of the individuallyaddressable elements 102 is timed so that one or more individuallyaddressable elements 102 are turned ON when they are in exposure region204 and turned OFF when they are outside of region 204. For example, inFIG. 6(A), a plurality of two-dimensional arrays of radiation emittingdiodes 200 are translated in direction 208—two arrays in positivedirection 208 and an intermediate one between the two arrays in negativedirection 208. The turning ON or OFF of the radiation emitting diodes102 is timed so that certain radiation emitting diodes 102 of each array200 are turned ON when they are in exposure region 204 and turned OFFwhen they are outside of region 204. Of course, the arrays 200 cantravel in the opposite direction, i.e., the two arrays in negativedirection 208 and the intermediate one between the two arrays inpositive direction 208, when, for example, the arrays 200 reach the endof their travel. In a further example, in FIG. 6(B), a plurality ofinterleaved single dimensional arrays of radiation emitting diodes 200are translated in direction 208—alternating in positive direction 208and negative direction 208. The turning ON or OFF of the radiationemitting diodes 102 is timed so that certain radiation emitting diodes102 of each array 200 are turned ON when they are in exposure region 204and turned OFF when they are outside of region 204. Of course, thearrays 200 can travel in the opposite direction. In a further example,in FIG. 6(C), a single array of radiation emitting diodes 200 (shown asone-dimensional but it doesn't need to be) is translated in direction208. The turning ON or OFF of the radiation emitting diodes 102 is timedso that certain radiation emitting diodes 102 of each array 200 areturned ON when they are in exposure region 204 and turned OFF when theyare outside of region 204.

In an embodiment, each of the arrays 200 is a rotatable plate having aplurality of spatially separated individually addressable elements 102arranged around the plate. In use, each plate rotates about its own axis206, for example, in the directions shown by the arrows in FIG. 5. Thatis, the arrays 200 may alternately rotate in clockwise andanti-clockwise directions as shown in FIG. 5. Alternatively, each of thearrays 200 may rotate in a clockwise direction or rotate in ananti-clockwise direction. In an embodiment, the array 200 rotatescompletely around. In an embodiment, the array 200 rotates an arc lessthan completely around. In an embodiment, the array 200 may rotate aboutan axis extending in the X- or Y-direction if, for example, thesubstrate scans in the Z-direction. In an embodiment, referring to FIG.6(D), the individually addressable elements 102 of the array 200 may bearranged at the edge and project in a radial direction out toward thesubstrate 114. The substrate 114 may extend around at least part of theside of the array 200. In this case, the array 200 rotates about an axisextending in the X-direction and the substrate 114 moves in theX-direction.

In use, the motion of the individually addressable elements 102 areappropriately timed to be located in the exposure region 204 so as toproject all or part of the beam 110. For example, in an embodiment, theone or more individually addressable elements 102 are radiation emittingdevices and the turning ON or OFF of the individually addressableelements 102 is timed so that one or more individually addressableelements 102 are turned ON when they are in exposure region 204 andturned OFF when they are outside of region 204. So, in an embodiment,the radiating emitting devices 102 could be all kept on during motionand then certain ones of the radiation emitting devices 102 aremodulated off in the exposure region 204. An appropriate shield betweenthe radiation emitting devices 102 and the substrate and outside of theexposure region 204 may be required to shield the exposure region 204from turned on radiation emitting devices 102 outside of the exposureregion 204. Having the radiation emitting devices 102 consistently oncan facilitate having the radiation emitting devices 102 at asubstantially uniform temperature during use. In an embodiment, theradiation emitting devices 102 could kept off most of the time and oneor more of the radiation emitting devices 102 turned on when in theexposure region 204.

In an embodiment, the rotatable plate may have configuration as shown inFIG. 7. For example, in FIG. 7(A), a schematic top view of a rotatableplate is shown. The rotatable plate may have an array 200 havingmultiple subarrays 210 of individually addressable elements 102 arrangedaround the plate (compared with the rotatable plate of FIG. 5, whichshows schematically a single array 200 of individually addressableelements 102 arranged around the plate). In FIG. 7(A), the subarrays 210are shown as staggered with respect to each other such that anindividually addressable element 102 of one subarray 210 is between twoindividually addressable elements 102 of an other subarray 210. However,the individually addressable elements 102 of the subarrays 210 may bealigned with each other. The individually addressable elements 102 maybe rotated, individually or together, by motor 216 about an axis, inthis example, running in the Z-direction in FIG. 7(A) through motor 216.The motor 216 may be attached to the rotatable plate and connected to aframe, e.g. frame 160, or attached to a frame, e.g., frame 160, andconnected to the rotatable plate. In an embodiment, motor 216 (or, forexample, some motor located elsewhere) may cause other movement of theindividually addressable elements 102, whether individually or together.For example, motor 216 may cause translation of one or more of theindividually addressable elements 102 in the X-, Y-, and/orZ-directions. In addition or alternatively, the motor 216 may causemotor 216 may cause rotation of one or more of the individuallyaddressable elements 102 about the X- and/or Y-directions (i.e., R_(x)and/or R_(y) motion).

In an embodiment of a rotatable plate, shown schematically in FIG. 7(B)as a top view, the rotatable plate may have an opening 212 in itscentral area with the array 200 of individually addressable elements 102arranged on the plate outside of the opening 212. So, for example, therotatable plate may form an annular disk as shown in FIG. 7(B) with thearray 200 of individually addressable elements 102 arranged around thedisk. An opening can reduce the weight of the rotatable plate and/orfacilitate cooling of the individually addressable elements 102.

In an embodiment, the rotatable plate may be supported at an outerperiphery using a support 214. The support 214 may be a bearing, such aroller bearing or a gas bearing. Rotation (and/or other movement e.g.,translation in X-, Y-, and/or Z-directions and/or R_(x) motion and/orR_(y) motion) may be provided by a motor 216 as shown in FIG. 7(A).Additionally or alternatively, the support 214 may include a motor tocause the individually addressable elements 102 to rotate about axis A(and/or provide other movement e.g., translation in X-, Y-, and/orZ-directions and/or R_(x) motion and/or R_(y) motion).

In an embodiment, referring to FIGS. 7(D) and 7(E), the rotatable platehaving an array 200 of individually addressable elements 102 may beattached to a rotatable structure 218. The rotatable structure 218 maybe rotated by motor 220 about axis B. Further, the rotatable plate maybe rotated relative to the rotatable structure 218 by motor 216, themotor 216 causing the rotatable plate to rotate about axis A. In anembodiment, the rotation axes A and B do not coincide and thus the axesare spatially separated as shown in FIGS. 7(D) and 7(E). In anembodiment, the rotation axes A and B are substantially parallel to eachother. In use during exposure, both the rotatable structure 218 and therotatable plate rotate. The rotation may be coordinated so that theindividually addressable elements 102 in the exposure region 204 may bealigned in a substantially straight line. This can be compared with, forexample, the embodiment of FIG. 5 where the individually addressableelements 102 in the exposure region 204 may not be aligned in asubstantially straight line.

Having movable individually addressable elements as described above, thenumber of individually addressable elements may be reduced by movinginto exposure region 204 individually addressable elements when needed.Accordingly, a thermal load may be reduced.

In an embodiment, more movable individually addressable elements thantheoretically needed (e.g. on a rotatable plate) may be provided. Apossible advantage of this arrangement is that if one or more movableindividually addressable elements break or fail to operate, one or moreother of the movable individually addressable elements can be usedinstead. In addition or alternatively, extra movable individuallyaddressable elements may have an advantage for controlling thermal loadon the individually addressable elements as the more movableindividually addressable elements there are, the more opportunity thereis for movable individually addressable elements outside of the exposureregion 204 to cool off.

In an embodiment, the movable individually addressable elements 102 areembedded in a material comprising low thermal conductivity. For example,the material may be a ceramic e.g., cordierite or a cordierite-basedceramic and/or Zerodur ceramic. In an embodiment, the movableindividually addressable elements 102 are embedded in a materialcomprising high thermal conductivity, for instance a metal, e.g. a metalof relatively light weight, for instance aluminum or titanium.

In an embodiment, the arrays 200 may comprise a temperature controlarrangement. For example, referring to FIG. 7(F), an array 200 may havea fluid (e.g., liquid) conducting channel 222 to transport cooling fluidon, near or through array 200 to cool the array. The channel 222 may beconnected to an appropriate heat exchanger and pump 228 to circulatefluid through the channel. A supply 224 and return 226 connected betweenthe channel 222 and heat exchanger and pump 228 can facilitatecirculation and temperature control of the fluid. A sensor 234 may beprovided in, on or near the array, to measure a parameter of the array200, which measurement may be used to control, e.g., the temperature ofthe fluid flow provided by the heat exchanger and pump. In anembodiment, sensor 234 may measure the expansion and/or contraction ofthe array 200 body, which measurement may be used to control thetemperature of the fluid flow provided by the heat exchanger and pump.Such expansion and/or contraction may be a proxy for temperature. In anembodiment, the sensor 234 may be integrated with the array 200 (asshown by the sensor 234 in the form of a dot) and/or may be separatefrom the array 200 (as shown by the sensor 234 in the form of a box).The sensor 234 separate from the array 200 may be an optical sensor.

In an embodiment, referring to FIG. 7(G), an array 200 may have one ormore fins 230 to increase the surface area for heat dissipation. Thefin(s) 230 may be, for example, on a top surface of the array 200 and/oron a side surface of the array 200. Optionally, one or more further fins232 may be provided to cooperate with the fin(s) 230 to facilitate heatdissipation. For example, the fin(s) 232 is able to absorb heat from thefin(s) 230 and may comprise a fluid (e.g., liquid) conducting channeland an associated heat exchanger/pump similar to as shown in anddescribed with respect to FIG. 7(F).

In an embodiment, referring to FIG. 7(H), an array 200 may be located ator near a fluid confinement structure 236 configured to maintain a fluid238 in contact with the array 200 body to facilitate heat dissipationvia the fluid. In an embodiment, the fluid 238 may be a liquid, e.g.,water. In an embodiment, the fluid confinement structure 236 provides aseal between it and the array 200 body. In an embodiment, the seal maybe a contactless seal provided through, for example, a flow of gas orcapillary force. In an embodiment, the fluid 238 is circulated, akin toas discussed with respect to the fluid conducting channel 222, topromote heat dissipation. The fluid 238 may be supplied by a fluidsupply device 240.

In an embodiment, referring to FIG. 7(H), an array 200 may be located ator near a fluid supply device 240 configured to project a fluid 238toward the array 200 body to facilitate heat dissipation via the fluid.In an embodiment, the fluid 238 is a gas, e.g., clean dry air, N₂, aninert gas, etc. While the fluid confinement structure 236 and the fluidsupply device 240 are shown together in FIG. 7(H), they need not beprovided together.

In an embodiment, the array 200 body is a substantially solid structurewith, for example, a cavity for the fluid conducting channel 222. In anembodiment, the array 200 body is a substantially frame like structurethat is mostly open and to which are attached the various components,e.g., the individually addressable elements 102, the fluid conductingchannel 222, etc. This open like structure facilitates gas flow and/orincreases the surface area. In an embodiment, the array 200 body is asubstantially solid structure with a plurality of cavities into orthrough the body to facilitate gas flow and/or increase the surfacearea.

While embodiments have been described above to provide cooling, theembodiments alternatively or in addition may provide heating.

In an embodiment, the array 200 is desirably kept at a substantiallyconstant steady state temperature during exposure use. So, for example,all or many of the individually addressable elements 102 of array 200may be powered on, before exposure, to reach at or near a desired steadystate temperature and during exposure, any one or more temperaturecontrol arrangements may be used to cool and/or heat the array 200 tomaintain the steady state temperature. In an embodiment, any one or moretemperature control arrangements may be used to heat the array 200 priorto exposure to reach at or near a desired steady state temperature.Then, during exposure, any one or more temperature control arrangementsmay be used to cool and/or heat the array 200 to maintain the steadystate temperature. A measurement from sensor 234 can be used in afeedforward and/or feedback manner to maintain the steady statetemperature. In an embodiment, each of a plurality of arrays 200 mayhave the same steady state temperature or one or more arrays 200 of aplurality of arrays 200 may have a different steady state temperaturethan one or more other arrays 200 of a plurality of arrays 200. In anembodiment, the array 200 is heated to a temperature higher than thedesired steady state temperature and then falls during exposure becauseof cooling applied by any one or more temperature control arrangementsand/or because the usage of the individually addressable elements 102isn't sufficient to maintain the temperature higher than the desiredsteady state temperature.

In an embodiment, to improve thermal control and overall cooling, thenumber of array 200 bodies is increased along and/or across the exposureregion. So, for example, instead of four arrays 200 shown in FIG. 5,five, six, seven, eight, nine, ten or more arrays 200 may be provided.Less arrays may be provided, e.g. one array 200, for instance a singlelarge array covering the full width of the substrate.

In an embodiment, a lens array as described herein is associated orintegrated with the movable individually addressable elements. Forexample, a lens array plate may be attached to each of the movablearrays 200 and thus movable (e.g., rotatable) with the individuallyaddressable elements 102. As discussed above, the lens array plate maybe displaceable with respect to the individually addressable elements102 (e.g., in the Z-direction). In an embodiment, a plurality of lensarray plates may be provided for an array 200, each lens array platebeing associated with different subset of the plurality of individuallyaddressable elements 102.

In an embodiment, referring to FIG. 7(I), a single separate lens 242 maybe attached in front of each individually addressable element 102 and bemovable with the individually addressable element 102 (e.g., rotatableabout axis A). Further, the lens 242 may be displaceable with respect tothe individually addressable element 102 (e.g., in the Z-direction)through the use of actuator 244. In an embodiment, referring to FIG.7(J), the individually addressable element 102 and the lens 242 may bedisplaced together relative to the body 246 of the array 200 by actuator244. In an embodiment, the actuator 244 is configured to only displacelens 242 (i.e., with respect to individually addressable element 102 ortogether with individually addressable element 102) in the Z-direction.

In an embodiment, the actuator 244 is configured to displace lens 242 inup to 3 degrees of freedom (the Z-direction, rotation about theX-direction, and/or rotation about the Y-direction). In an embodiment,the actuator 244 is configured to displace lens 242 in up to 6 degreesof freedom. Where the lens 242 is movable with respect to itsindividually addressable element 102, the lens 242 may be moved by theactuator 244 to change the position of the focus of the lens 242 withrespect to the substrate. Where the lens 242 is movable with itsindividually addressable element 102, the focus position of the lens 242is substantially constant but displaced with respect to the substrate.In an embodiment, the movement of lens 242 is individually controlledfor each lens 242 associated with each individually addressable element102 of the array 200. In an embodiment, a subset of a plurality oflenses 242 are movable together with respect to, or together with, theirassociated subset of the plurality of individually addressable elements102. In this latter situation, fineness of focus control may be expensedfor lower data overhead and/or faster response. In an embodiment, thesize of the spot of radiation provided by an individually addressableelement 102 may be adjusted by defocus, i.e., the more defocused, thelarger the spot size.

In an embodiment, referring to FIG. 7(K), an aperture structure 248having an aperture therein may be located below lens 242. In anembodiment, the aperture structure 248 may be located above the lens 242between the lens 242 and the associated individually addressable element102. The aperture structure 248 can limit diffraction effects of thelens 242, the associated individually addressable element 102, and/or ofadjacent lenses 242/individually addressable elements 102.

In an embodiment, the individually addressable element 102 may be aradiation emitting device e.g., a laser diode. Such radiation emittingdevice may have high spatial coherence and accordingly may present aspeckle problem. To avoid such a speckle problem, the radiation emittedby the radiation emitting device should be scrambled by shifting thephase of a beam portion with respect to another beam portion. In anembodiment, referring to FIGS. 7(L) and 7(M), a plate 250 may be locatedon, for example, frame 160 and the individually addressable elements 102move with respect to the plate 250. As the individually addressableelements 102 move with respect to and over the plate 250, the plate 250causes disruption of the spatial coherence of the radiation emitted bythe individually addressable elements 102 toward the substrate. In anembodiment, as the individually addressable elements 102 move withrespect to and over the plate 250, the plate 250 is located between alens 242 and its associated individually addressable element 102. In anembodiment, the plate 250 may be located between the lens 242 and thesubstrate.

In an embodiment, referring to FIG. 7(N), a spatial coherence disruptingdevice 252 may be located between the substrate and at least theindividually addressable elements 102 that project radiation onto theexposure region. In an embodiment, the spatial coherence disruptingdevice 252 is located between the individually addressable elements 102and the lens 242 and may be attached to the body 246. In an embodiment,the spatial coherence disrupting device 252 is a phase modulator, avibrating plate, or a rotating plate. As an individually addressableelement 102 project radiation toward the substrate, the spatialcoherence disrupting device 252 causes disruption of the spatialcoherence of the radiation emitted by the individually addressableelement 102.

In an embodiment, the lens array (whether together as unit or asindividual lenses) is attached to an array 200, desirably via highthermal conductivity material, to facilitate conduction of heat from thelens array to the array 200, where cooling may be more advantageouslyprovided.

In an embodiment, the array 200 may comprises one or more focus or levelsensors 254, like level sensor 150. For example, a sensor 254 may beconfigured to measure focus for each individually addressable element102 of the array 200 or for a plurality of individually addressableelements 102 of the array 200. Accordingly, if an out of focus conditionis detected, the focus may be corrected for each individuallyaddressable element 102 of the array 200 or for a plurality ofindividually addressable elements 102 of the array 200. Focus may becorrected by, for example, moving lens 242 in a Z-direction (and/orabout the X-axis and/or about the Y-axis).

In an embodiment, the sensor 254 is integral with an individuallyaddressable element 102 (or may be integral with a plurality ofindividually addressable elements 102 of the array 200). Referring toFIG. 7(O), an example sensor 254 is schematically depicted. A focusdetection beam 256 is redirected (e.g., reflected) off the substratesurface, passes through the lens 242 and is directed toward a detector262 by a half-silvered mirror 258. In an embodiment, the focus detectionbeam 256 may be radiation used for exposure that happens to beredirected from the substrate. In an embodiment, the focus detectionbeam 256 may be a dedicated beam directed at the substrate and which,upon redirected by the substrate, becomes the beam 256. A knife edge 260(which may be an aperture) is in the path of the beam 256 before thebeam 256 impinges on the detector 262. In this example, the detector 262comprises at least two radiation-sensitive parts (e.g., areas ordetectors), shown in FIG. 7(O) by the split of detector 262. When thesubstrate is in focus, a sharp image is formed at edge 260 and so theradiation-sensitive parts of the detector 262 receive equal amounts ofradiation. When the substrate is out of focus, the beam 256 shifts andthe image would form in front of or behind edge 260. Thus, the edge 260would intercept certain parts of the beam 256 and oneradiation-sensitive part of the detector 262 would receive a smalleramount of radiation than an other radiation-sensitive part of thedetector 262. A comparison of the output signals from theradiation-sensitive parts of the detector 262 enables the amount bywhich, and the direction in which, the plane of the substrate from whichthe beam 256 redirected differs from a desired position. The signals maybe electronically processed to give a control signal by which, forexample, lens 242 may be adjusted. The mirror 258, edge 260 and detector262 may be mounted to the array 200. In an embodiment, the detector 262may be a quad cell.

In an embodiment, 400 individually addressable elements 102, with 133working (at any one time), may be provided. In an embodiment, 600-1200working individually addressable elements 102 may be provided with,optionally, additional individually addressable elements 102 as, forexample, a reserve and/or for correction exposures (as, for example,discussed above). The number of working individually addressableelements 102 may depend, for example, on the resist, which requires acertain dosage of radiation for patterning. Where the individuallyaddressable elements 102 are rotatable such a individually addressableelements 102, the individually addressable elements 102 may be rotatedat a frequency of 6 Hz with the 1200 working individually addressableelements 102. The individually addressable elements 102 may be rotatedat a higher frequency if there are less individually addressableelements 102; the individually addressable elements 102 may be rotatedat a lower frequency if there are more individually addressable elements102.

In an embodiment, the number of individually addressable elements 102may be reduced using the movable individually addressable elements 102compared with an array of individually addressable elements 102. Forexample, 600-1200 working (at any one time) individually addressableelements 102 may be provided. Moreover, the reduced number can yieldsubstantially similar results as an array of individually addressableelements 102 but with one or more benefits. For example, for sufficientexposure capability using an array of violet-blue diodes, an array of100,000 violet-blue diodes may be needed, for example, arranged at 200diodes×500 diodes. Operating at a frequency of 10 kHz, the optical powerper laser diode would be 0.33 mW. The electrical power per laser diodewould be 150 mW=35 mA×4.1V. So, for the array, the electrical powerwould be 15 kW. In an embodiment using movable individually addressableelements, 400 violet-blue diodes, with 133 working, may be provided.Operating at a frequency of 9 Mhz, the optical power per laser diodewould be 250 mW. The electrical power per laser diode would be 1000mW=240 mA×4.2V. So, for the array, the electrical power would be 133 W.Thus, the diodes of the movable individually addressable elementsarrangement may be operated in the steep part of the optical outputpower vs. forward current curve (240 mA v. 35 mA) as shown, e.g., inFIG. 7(P), yielding high output power per diode (250 mW v. 0.33 mW) butlow electrical power for the plurality of individually addressableelements (133 W v. 15 kW). Thus, the diodes may be used more efficientlyand lead to less power consumption and/or heat.

Thus, in an embodiment, diodes are operated in the steep part of thepower/forward current curve. Operating in the non-steep part of thepower/forward current curve may lead to incoherence of the radiation. Inan embodiment, the diode is operated with an optical power of greaterthan 5 mW but less than or equal to 20 mW, or less than or equal to 30mW, or less than or equal to 40 mW. In an embodiment, the diode is notoperated at optical power of greater than 300 mW. In an embodiment, thediode is operated in a single mode, rather than multi-mode.

The number of individually addressable elements 102 on an array 200 maydepend, inter alia (and as to an extent also noted above), on the lengthof the exposure region that the array 200 is intended to cover, thespeed with which the array is moved during exposure, the spot size(i.e., cross-sectional dimension, e.g., width/diameter, of the spotprojected on the substrate from an individually addressable element102), the desired intensity each of the individually addressableelements should provide (e.g. whether it is desired to spread theintended dose for a spot on the substrate over more than oneindividually addressable element to avoid damage to the substrate orresist on the substrate), the desired scan speed of the substrate, costconsiderations, the frequency with which the individually addressableelements can be turned on or off, and the desire for redundantindividually addressable elements 102 (as discussed earlier; e.g. forcorrection exposures or as a reserve, for instance if one or moreindividually addressable elements break down). In an embodiment, thearray 200 comprises at least 100 individually addressable elements 102,for instance at least 200 individually addressable elements, at least400 individually addressable elements, at least 600 individuallyaddressable elements, at least 1000 individually addressable elements,at least 1500 individually addressable elements, at least 2500individually addressable elements, or at least 5000 individuallyaddressable elements. In an embodiment, the array 200 comprises lessthan 50000 individually addressable elements 102, for instance less than25000 individually addressable elements, less than 15000 individuallyaddressable elements, less than 10000 individually addressable elements,less than 7500 individually addressable elements, less than 5000individually addressable elements, less than 2500 individuallyaddressable elements, less than 1200 individually addressable elements,less than 600 individually addressable elements, or less than 300individually addressable elements.

In an embodiment, the array 200 comprises for each 10 cm of length ofexposure region (i.e., normalizing the number of individuallyaddressable elements in an array to 10 cm of length of exposure region)at least 100 individually addressable elements 102, for instance atleast 200 individually addressable elements, at least 400 individuallyaddressable elements, at least 600 individually addressable elements, atleast 1000 individually addressable elements, at least 1500 individuallyaddressable elements, at least 2500 individually addressable elements,or at least 5000 individually addressable elements. In an embodiment,the array 200 comprises for each 10 cm of length of exposure region(i.e., normalizing the number of individually addressable elements in anarray to 10 cm of length of exposure region) less than 50000individually addressable elements 102, for instance less than 25000individually addressable elements, less than 15000 individuallyaddressable elements, less than 10000 individually addressable elements,less than 7500 individually addressable elements, less than 5000individually addressable elements, less than 2500 individuallyaddressable elements, less than 1200 individually addressable elements,less than 600 individually addressable elements, or less than 300individually addressable elements.

In an embodiment, the array 200 comprises less than 75% redundantindividually addressable elements 102, e.g. 67% or less, 50% or less,about 33% or less, 25% or less, 20% or less, 10% or less, or 5% or less.In an embodiment the array 200 comprises at least 5% redundantindividually addressable elements 102, e.g. at least 10%, at least 25%,at least 33%, at least 50%, or at least 65%. In an embodiment, the arraycomprises about 67% redundant individually addressable elements.

In an embodiment, spot size of an individual addressable element on thesubstrate is 10 microns or less, 5 microns or less, e.g. 3 microns orless, 2 microns or less, 1 micron or less, 0.5 micron or less, 0.3micron or less, or about 0.1 micron. In an embodiment, spot size of anindividual addressable element on the substrate is 0.1 micron or more,0.2 micron or more, 0.3 micron or more, 0.5 micron or more, 0.7 micronor more, 1 micron or more, 1.5 microns or more, 2 microns or more, or 5microns or more. In an embodiment, spot size is about 0.1 micron. In anembodiment, spot size is about 0.5 micron. In an embodiment, spot sizeis about 1 micron.

In operation of the lithographic apparatus 100, a substrate 114 isloaded onto the substrate table 106 using, for example, a robot handler(not shown). The substrate 114 is then displaced in the X-directionunder the frame 160 and the individually addressable elements 102. Thesubstrate 114 is measured by the level sensor and/or the alignmentsensor 150 and then is exposed to a pattern using individuallyaddressable elements 102 as described above. The individuallyaddressable elements 102 may be operated, for example, to providepixel-grid imaging as discussed herein.

FIG. 8 depicts a schematic side view of a lithographic apparatusaccording to an embodiment of the invention. As shown in FIG. 8, thelithographic apparatus 100 comprises a patterning device 104 and aprojection system 108. The projection system 108 comprises two lenses176, 172. The first lens 176 is arranged to receive the modulatedradiation beam 110 from patterning device 104 and focus it through acontrast aperture in an aperture stop 174. A further lens (not shown)may be located in the aperture. The radiation beam 110 then diverges andis focused by the second lens 172 (e.g., a field lens).

The projection system 108 further comprises an array of lenses 170arranged to receive the modulated radiation beam 110. Different portionsof the modulated radiation beam 110, corresponding to one or more of theindividually controllable elements in the patterning device 104, passthrough respective different lenses in the array of lenses 170. Eachlens focuses the respective portion of the modulated radiation beam 110to a point that lies on the substrate 114. In this way an array ofradiation spots S (see FIG. 12) is exposed onto the substrate 114. Itwill be appreciated that, although only five lenses of the illustratedarray of lenses 170 are shown, the array of lenses may comprise manyhundreds or thousands of lenses (the same is true of the individuallycontrollable elements used as the patterning device 104).

As shown in FIG. 8, a free working distance FWD is provided between thesubstrate 114 and the lens array 170. This distance allows the substrate114 and/or the lens array 170 to be moved to allow, for example, focuscorrection. In an embodiment, the free working distance is in the rangeof 1-3 mm, e.g., about 1.4 mm. The individually addressable elements ofthe patterning device 104 are arranged at a pitch P, which results in anassociated pitch P of imaging spots at substrate 114. In an embodiment,the lens array 170 can provide a NA of 0.15 or 0.18. In an embodiment,the imaging spot size is around 1.6 μm.

In this embodiment, the projection system 108 can be a 1:1 projectionsystem in that the array spacing of the image spots on the substrate 114is the same as the array spacing of the pixels of the patterning device104. To provide improved resolution, the image spots can be much smallerthan the pixels of the patterning device 104.

FIG. 9 depicts a schematic side view of a lithographic apparatusaccording to an embodiment of the invention. In this embodiment, thereare no optics between the patterning device 104 and the substrate 114other than a lens array 170.

The lithographic apparatus 100 of FIG. 9 comprises a patterning device104 and a projection system 108. In this case, the projection system 108only comprises an array of lenses 170 arranged to receive the modulatedradiation beam 110. Different portions of the modulated radiation beam110, corresponding to one or more of the individually controllableelements in the patterning device 104, pass through respective differentlenses in the array of lenses 170. Each lens focuses the respectiveportion of the modulated radiation beam 110 to a point that lies on thesubstrate 114. In this way an array of radiation spots S (see FIG. 12)is exposed onto the substrate 114. It will be appreciated that, althoughonly five lenses of the illustrated array of lenses 170 are shown, thearray of lenses may comprise many hundreds or thousands of lenses (thesame is true of the individually controllable elements used as thepatterning device 104).

Like in FIG. 8, a free working distance FWD is provided between thesubstrate 114 and the lens array 170. This distance allows the substrate114 and/or the lens array 170 to be moved to allow, for example, focuscorrection. The individually addressable elements of the patterningdevice 104 are arranged at a pitch P, which results in an associatedpitch P of imaging spots at substrate 114. In an embodiment, the lensarray 170 can provide a NA of 0.15. In an embodiment, the imaging spotsize is around 1.6 μm.

FIG. 10 depicts a schematic side view of a lithographic apparatusaccording to an embodiment of the invention using movable individuallyaddressable elements 102 as described above with respect to FIG. 5. Inthis embodiment, there are no other optics between the patterning device104 and the substrate 114 other than a lens array 170.

The lithographic apparatus 100 of FIG. 10 comprises a patterning device104 and a projection system 108. In this case, the projection system 108only comprises an array of lenses 170 arranged to receive the modulatedradiation beam 110. Different portions of the modulated radiation beam110, corresponding to one or more of the individually controllableelements in the patterning device 104, pass through respective differentlenses in the array of lenses 170. Each lens focuses the respectiveportion of the modulated radiation beam 110 to a point that lies on thesubstrate 114. In this way an array of radiation spots S (see FIG. 12)is exposed onto the substrate 114. It will be appreciated that, althoughonly five lenses of the illustrated array of lenses 170 are shown, thearray of lenses may comprise many hundreds or thousands of lenses (thesame is true of the individually controllable elements used as thepatterning device 104).

Like in FIG. 8, a free working distance FWD is provided between thesubstrate 114 and the lens array 170. This distance allows the substrate114 and/or the lens array 170 to be moved to allow, for example, focuscorrection. The individually addressable elements of the patterningdevice 104 are arranged at a pitch P, which results in an associatedpitch P of imaging spots at substrate 114. In an embodiment, the lensarray 170 can provide a NA of 0.15. In an embodiment, the imaging spotsize is around 1.6 μm.

FIG. 11 illustrates a plurality of individually addressable elements102, specifically six individually addressable elements 102. In thisembodiment, each of the individually addressable elements 102 is aradiation emitting diode, e.g., a blue-violet laser diode. Eachradiation emitting diode bridges two electrical lines to supplyelectrical current to the radiation emitting diode to control the diode.Thus, the diodes form an addressable grid. A width between the twoelectrical lines is approximately 250 μm and the radiation emittingdiodes have a pitch of approximately 500 μm.

FIG. 12 illustrates schematically how the pattern on the substrate 114may be generated. The filled in circles represent the array of spots Sprojected onto the substrate 114 by the array of lenses MLA in theprojection system 108. The substrate 114 is moved relative to theprojection system 108 in the X-direction as a series of exposures areexposed on the substrate. The open circles represent spot exposures SEthat have previously been exposed on the substrate. As shown, each spotprojected onto the substrate 114 by the array of lenses 170 within theprojection system 108 exposes a row R of spot exposures on the substrate114. The complete pattern for the substrate 114 is generated by the sumof all the rows R of spot exposures SE exposed by each of the spots S.Such an arrangement is commonly referred to as “pixel grid imaging.” Itwill be appreciated that FIG. 12 is a schematic drawing and that spots Smay overlap in practice.

It can be seen that the array of radiation spots S is arranged at anangle α relative to the substrate 114 (the edges of the substrate 114lie parallel to the X- and Y-directions). This is done so that, when thesubstrate 114 is moved in the scanning direction (the X-direction), eachradiation spot will pass over a different area of the substrate, therebyallowing the entire substrate to be covered by the array of radiationspots S. In an embodiment, the angle α is at most 20°, 10°, for instanceat most 5°, at most 3°, at most 1°, at most 0.5°, at most 0.25°, at most0.10°, at most 0.05°, or at most 0.01°. In an embodiment, the angle α isat least 0.0001°, e.g. at least 0.001°. The angle of inclination α andthe width of the array in the scanning direction are determined inaccordance with the image spot size and array spacing in the directionperpendicular to the scanning direction to ensure the whole surface areaof the substrate 114 is addressed.

FIG. 13 shows schematically how an entire substrate 114 may be exposedin a single scan, by using a plurality of optical engines, each opticalengine comprising one or more individually addressable elements. Eightarrays SA of radiation spots S (not shown) are produced by eight opticalengines, arranged in two rows R1, R2 in a ‘chess board’ or staggeredconfiguration such that the edge of one array of radiation spots Sslightly overlaps with the edge of the adjacent array of radiation spotsS. In an embodiment, the optical engines are arranged in at least 3rows, for instance 4 rows or 5 rows. In this way, a band of radiationextends across the width of the substrate W, allowing exposure of theentire substrate to be performed in a single scan. Such “full width”single pass exposure helps to avoid possible stitching issues ofconnecting two or more passes and may also reduce machine footprint asthe substrate may not need to be moved in a direction transverse to thesubstrate pass direction. It will be appreciated that any suitablenumber of optical engines may be used. In an embodiment, the number ofoptical engines is at least 1, for instance at least 2, at least 4, atleast 8, at least 10, at least 12, at least 14, or at least 17. In anembodiment, the number of optical engines is less than 40, e.g. lessthan 30 or less than 20. Each optical engine may comprise a separatepatterning device 104 and optionally a separate projection system 108and/or radiation system as described above. It is to be appreciated,however, that two or more optical engines may share at least a part ofone or more of the radiation system, patterning device 104, and/orprojection system 108.

In the embodiments described herein, a controller is provided to controlthe individually addressable elements. For example, in an example wherethe individually addressable elements are radiation emitting devices,the controller may control when the individually addressable elementsare turned ON or OFF and enable high frequency modulation of theindividually addressable elements. The controller may control the powerof the radiation emitted by one or more of the individually addressableelements. The controller may modulate the intensity of radiation emittedby one or more of the individually addressable elements. The controllermay control/adjust intensity uniformity across all or part of an arrayof individually addressable elements. The controller may adjust theradiation output of the individually addressable elements to correct forimaging errors, e.g., etendue and optical aberrations (e.g., coma,astigmatism, etc.)

In lithography, a desired feature may be created on a substrate byselectively exposing a layer of resist on a substrate to radiation, e.g.by exposing the layer of resist to patterned radiation. Areas of theresist receiving a certain minimum radiation dose (“dose threshold”)undergo a chemical reaction, whereas other areas remain unchanged. Thethus created chemical differences in the resist layer allow fordeveloping the resist, i.e. selectively removing either the areas havingreceived at least the minimum dose or removing the areas that did notreceive the minimum dose. As a result, part of the substrate is stillprotected by a resist whereas the areas of the substrate from whichresist is removed are exposed, allowing e.g. for additional processingsteps, for instance selective etching of the substrate, selective metaldeposition, etc. thereby creating the desired feature. Patterning theradiation may be effected by setting the individually controllableelements in a patterning device such that the radiation that istransmitted to an area of the resist layer on the substrate within thedesired feature is at a sufficiently high intensity that the areareceives a dose of radiation above the dose threshold during theexposure, whereas other areas on the substrate receive a radiation dosebelow the dose threshold by setting the corresponding individuallycontrollable elements to provide a zero or significantly lower radiationintensity.

In practice, the radiation dose at the edges of the desired feature maynot abruptly change from a given maximum dose to zero dose even if theindividually controllable elements are set to provide the maximumradiation intensity on one side of the feature boundary and the minimumradiation intensity on the other side. Instead, due to diffractiveeffects, the level of the radiation dose may drop off across atransition zone. The position of the boundary of the desired featureultimately formed after developing the resist is then determined by theposition at which the received dose drops below the radiation dosethreshold. The profile of the drop-off of radiation dose across thetransition zone, and hence the precise position of the feature boundary,can be controlled more precisely by setting the individuallycontrollable elements that provide radiation to points on the substratethat are on or near the feature boundary not only to maximum or minimumintensity levels but also to intensity levels between the maximum andminimum intensity levels. This is commonly referred to as “grayscaling”or “grayleveling”.

Grayscaling may provide greater control of the position of the featureboundaries than is possible in a lithography system in which theradiation intensity provided to the substrate by a given individuallycontrollable element can only be set to two values (namely just amaximum value and a minimum value). In an embodiment, at least threedifferent radiation intensity values can be projected onto thesubstrate, e.g. at least 4 radiation intensity values, at least 8radiation intensity values, at least 16 radiation intensity values, atleast 32 radiation intensity values, at least 64 radiation intensityvalues, at least 100 radiation intensity values, at least 128 radiationintensity values, or at least 256 radiation intensity values. If thepatterning device is a radiation source itself (e.g. an array of lightemitting diodes or laser diodes), grayscaling may be effected, e.g., bycontrolling the intensity levels of the radiation being transmitted. Ifthe contrast device is a micromirror device, grayscaling may beeffected, e.g., by controlling the tilting angles of the micromirrors.Also, grayscaling may be effected by grouping a plurality ofprogrammable elements in the contrast device and controlling the numberof elements within the group that are switched on or off at a giventime.

In one example, the patterning device may have a series of statesincluding: (a) a black state in which radiation provided is a minimum,or even a zero contribution to the intensity distribution of itscorresponding pixel; (b) a whitest state in which the radiation providedmakes a maximum contribution; and (c) a plurality of states in betweenin which the radiation provided makes intermediate contributions. Thestates are divided into a normal set, used for normal beampatterning/printing, and a compensation set, used for compensating forthe effects of defective elements. The normal set comprises the blackstate and a first group of the intermediate states. This first groupwill be described as gray states, and they are selectable to provideprogressively increasing contributions to corresponding pixel intensityfrom the minimum black value up to a certain normal maximum. Thecompensation set comprises the remaining, second group of intermediatestates together with the whitest state. This second group ofintermediate states will be described as white states, and they areselectable to provide contributions greater than the normal maximum,progressively increasing up to the true maximum corresponding to thewhitest state. Although the second group of intermediate states isdescribed as white states, it will be appreciated that this is simply tofacilitate the distinction between the normal and compensatory exposuresteps. The entire plurality of states could alternatively be describedas a sequence of gray states, between black and white, selectable toenable grayscale printing.

It should be appreciated that grayscaling may be used for additional oralternative purposes to that described above. For example, theprocessing of the substrate after the exposure may be tuned such thatthere are more than two potential responses of regions of the substrate,dependent on received radiation dose level. For example, a portion ofthe substrate receiving a radiation dose below a first thresholdresponds in a first manner; a portion of the substrate receiving aradiation dose above the first threshold but below a second thresholdresponds in a second manner; and a portion of the substrate receiving aradiation dose above the second threshold responds in a third manner.Accordingly, grayscaling may be used to provide a radiation dose profileacross the substrate having more than two desired dose levels. In anembodiment, the radiation dose profile has at least 2 desired doselevels, e.g. at least 3 desired radiation dose levels, at least 4desired radiation dose levels, at least 6 desired radiation dose levelsor at least 8 desired radiation dose levels.

It should further be appreciated that the radiation dose profile may becontrolled by methods other than by merely controlling the intensity ofthe radiation received at each point on the substrate, as describedabove. For example, the radiation dose received by each point on thesubstrate may alternatively or additionally be controlled by controllingthe duration of the exposure of said point. As a further example, eachpoint on the substrate may potentially receive radiation in a pluralityof successive exposures. The radiation dose received by each point may,therefore, be alternatively or additionally controlled by exposing saidpoint using a selected subset of said plurality of successive exposures.

In order to form the pattern on the substrate, it is necessary to seteach of the individually controllable elements in the patterning deviceto the requisite state at each stage during the exposure process.Therefore control signals, representing the requisite states, must betransmitted to each of the individually controllable elements.Desirably, the lithographic apparatus includes a controller 400 thatgenerates the control signals. The pattern to be formed on the substratemay be provided to the lithographic apparatus in a vector-defined formate.g., GDSII. In order to convert the design information into the controlsignals for each individually controllable element, the controllerincludes one or more data manipulation devices, each configured toperform a processing step on a data stream that represents the pattern.The data manipulation devices may collectively be referred to as the“datapath”.

The data manipulation devices of the datapath may be configured toperform one or more of the following functions: converting vector-baseddesign information into bitmap pattern data; converting bitmap patterndata into a required radiation dose map (namely a required radiationdose profile across the substrate); converting a required radiation dosemap into required radiation intensity values for each individuallycontrollable element; and converting the required radiation intensityvalues for each individually controllable element into correspondingcontrol signals.

In an embodiment, the control signals may be supplied to theindividually controllable elements 102 and/or one or more other devices(e.g., a sensor) by wired or wireless communication. Further, signalsfrom the individually controllable elements 102 and/or from one or moreother devices (e.g., a sensor) may be communicated to the controller400.

Referring to FIG. 14(A), in a wireless embodiment, a transceiver (ormerely a transmitter) 406 emits a signal embodying the control signalfor receipt by a transceiver (or merely a receiver) 402. The controlsignal is transmitted to the respective individually controllableelements 102 by one or more lines 404. In an embodiment, the signal fromthe transceiver 406 may embody multiple control signals and transceiver402 can demultiplex the signal into the multiple control signals for therespective individually controllable elements 102 and/or one or moreother devices (e.g., a sensor). In an embodiment, the wirelesstransmission may be by radio frequency (RF).

Referring to FIG. 14(B), in a wired embodiment, one or more lines 404may connect the controller 400 to the individually controllable elements102 and/or one or more other devices (e.g., a sensor). In an embodiment,a single line 404 may be provided to carry each of the control signalsto and/or from the array 200 body. At the array 200 body, the controlsignals may be then individually provided to the individuallycontrollable elements 102 and/or one or more other devices (e.g., asensor)). For example, like the wireless example, the control signalsmay be multiplexed for transmission on the single line and then bedemultiplexed for provision to the individually controllable elements102 and/or one or more other devices (e.g., a sensor)). In anembodiment, a plurality of lines 404 may be provided to carry therespective control signals of the individually controllable elements 102and/or one or more other devices (e.g., a sensor)). In embodiment wherethe array 200 is rotatable, the line(s) 404 may be provided along theaxis of rotation A. In an embodiment, signals may be provided to or fromthe array 200 body through a sliding contact at or around motor 216.This may be advantageous for a rotatable embodiment. The sliding contactcan be through, for example, a brush contacting a plate.

In an embodiment, the line(s) 404 may be an optical line. In that case,the signal may be an optical signal where, for example, differentcontrol signals may be carried at different wavelengths.

In a similar manner to the control signals, power may be supplied to theindividually controllable elements 102 or one or more other devices(e.g., a sensor) by wired or wireless means. For example, in a wiredembodiment, power may be supplied by one or more lines 404, whether thesame as the ones that carry the signals or different. A sliding contactarrangement may be provided as discussed above to transmit power. In awireless embodiment, power may be delivered by RF coupling.

While the previous discussion focused on the control signals supplied tothe individually controllable elements 102 and/or one or more otherdevices (e.g., a sensor), they should be understood to encompass inaddition or alternatively, through appropriate configuration,transmission of signals from the individually controllable elements 102and/or from one or more other devices (e.g., a sensor) to the controller400. So, communication may be one-way (e.g., only to or from theindividually controllable elements 102 and/or one or more other devices(e.g., a sensor)) or two-way (i.e., from and to the individuallycontrollable elements 102 and/or one or more other devices (e.g., asensor)). For example, the transceiver 402 may multiplex multiplesignals from the individually controllable elements 102 and/or from oneor more other devices (e.g., a sensor) for transmission to transceiver406, where it can be demultiplexed into individual signals.

In an embodiment, the control signals to provide the pattern may bealtered to account for factors that may influence the proper supplyand/or realization of the pattern on the substrate. For example, acorrection may be applied to the control signals to account for theheating of one or more of the arrays 200. Such heating may cause changedpointing direction of the individually controllable elements 102, changein uniformity of the radiation from the individually controllableelements 102, etc. In an embodiment, a measured temperature and/orexpansion/contraction associated with an array 200 (e.g., of one or moreof the individually controllable elements 102) from, e.g., sensor 234may used to alter the control signals that would have been otherwiseprovided to form the pattern. So, for example, during exposure, thetemperature of the individually controllable elements 102 may vary, thevariance causing a change of the projected pattern that would beprovided at a single constant temperature. Accordingly, the controlsignals may be altered to account for such variance. Similarly, in anembodiment, results from the alignment sensor and/or the level sensor150 may be used to alter the pattern provided by the individuallycontrollable elements 102. The pattern may be altered to correct, forexample, distortion, which may arise from, e.g., optics (if any) betweenthe individually controllable elements 102 and the substrate 114,irregularities in the positioning of the substrate 114, unevenness ofthe substrate 114, etc.

In an embodiment, the change in the control signals may be determinedbased on theory of the physical/optical results on the desired patternarising from the measured parameter (e.g., measured temperature,measured distance by a level sensor, etc.). In an embodiment, the changein the control signals may be determined based on an experimental orempirical model of the physical/optical results on the desired patternarising from the measured parameter. In an embodiment, the change of thecontrol signals may be applied in a feedforward and/or feedback manner.

In an embodiment, the lithographic apparatus may comprise a sensor 500to measure a characteristic of the radiation that is or to betransmitted toward the substrate by one or more individuallycontrollable elements 102. Such a sensor may be a spot sensor or atransmission image sensor. The sensor may be used to, for example,determine the intensity of radiation from an individually controllableelement 102, uniformity of radiation from an individually controllableelement 102, a cross-sectional size or area of the spot of radiationfrom an individually controllable element 102, and/or the location (inthe X-Y plane) of the spot of radiation from an individuallycontrollable element 102.

FIG. 15 depicts a schematic top view of a lithographic apparatusaccording to an embodiment of the invention showing some examplelocations of the sensor 500. In an embodiment, one or more sensors 500are provided in or on the substrate table 106 to hold substrate 114. Forexample, a sensor 500 may be provided at the leading edge of thesubstrate table 106 and/or the trailing edge of the substrate table 106.In this example, four sensors 500 are shown, one for each array 200.Desirably, they are located at position that would not be covered by thesubstrate 116. In an alternative or additional example, a sensor may beprovided at a side edge of the substrate table 106, desirably at alocation that would not be covered by the substrate 116. The sensor 500at the leading edge of the substrate table 106 can be used forpre-exposure detection of an individually controllable element 102. Thesensor 500 at the trailing edge of the substrate table 106 can be usedfor post-exposure detection of an individually controllable element 102.The sensor 500 at the side edge of the substrate table 106 can be usedfor detection during exposure (“on-the-fly” detection) of anindividually controllable element 102.

Referring to FIG. 16(A), a schematic side view of a part of alithographic apparatus according to an embodiment of the invention isdepicted. In this example, only a single array 200 is depicted and otherparts of the lithographic apparatus are omitted for clarity; the sensorsdescribed herein may be applied to each or some of the arrays 200. Someadditional or alternative examples of the location of sensor 500 aredepicted in FIG. 16(A) (in addition to the sensor 500 of the substratetable 106). A first example is a sensor 500 on the frame 160 thatreceives radiation from an individually controllable element 102 via abeam redirecting structure 502 (e.g., a reflective mirror arrangement).In this first example, the individually controllable elements 102 movein the X-Y plane and so different ones of the individually controllableelement 102 can be located to provide radiation to the beam redirectingstructure 502. A second additional or alternative example is a sensor500 on the frame 160 that receives radiation from an individuallycontrollable element 102 from the back side of the individuallycontrollable element 102, i.e., the side opposite from which theexposure radiation is provided. In this second example, the individuallycontrollable elements 102 move in the X-Y plane and so different ones ofthe individually controllable element 102 can be located to provideradiation to the sensor 500. While the sensor 500 in the second exampleis shown in a path of an individually controllable element 102 at theexposure region 204, the sensor 500 may be located where sensor 510 isdepicted. In an embodiment, the sensor 500 on the frame 160 is in afixed position or else may be movable by virtue of, e.g., an associatedactuator. The first and second examples above may be used to provide“on-the-fly” sensing in addition to or alternatively to pre- and/orpost-exposure sensing. A third example is a sensor 500 on a structure504, 506. The structure 504, 506 may be movable by means of an actuator508. In an embodiment, the structure 504 is located under the path ofwhere the substrate table would move (as shown in FIG. 16(A)) or at theside of the path. In an embodiment, the structure 504 may be moved bythe actuator 508 to the position where the sensor 500 of substrate table106 is shown in FIG. 16(A) if the substrate table 106 were not there,such movement may be in the Z-direction (as shown in FIG. 16(A)) or inthe X- and/or Y-direction if the structure 504 were at the side of thepath. In an embodiment, the structure 506 is located above the path ofwhere the substrate table would move (as shown in FIG. 16(A)) or at theside of the path. In an embodiment, the structure 506 may be moved bythe actuator 508 to the position where the sensor 500 of substrate table106 is shown in FIG. 16(A) if the substrate table 106 were not there.Structure 506 may be attached to frame 160 and displaceable with respectto frame 160.

In operation to measure a characteristic of the radiation that is or tobe transmitted toward the substrate by one or more individuallycontrollable elements 102, the sensor 500 is located in a path ofradiation from an individually controllable element 102, by moving thesensor 500 and/or moving the radiation beam of the individuallycontrollable element 102. So, as an example, the substrate table 106 maybe moved to position sensor 500 in a path of radiation from anindividually controllable element 102 as shown in FIG. 16(A). In thiscase, the sensor 500 is positioned into a path of an individuallycontrollable element 102 at the exposure region 204. In an embodiment,the sensor 500 may be positioned into a path of an individuallycontrollable element 102 outside of the exposure region 204 (e.g., theindividually controllable element 102 shown on the left hand side, ifthe beam redirecting structure 502 where not there). Once located in thepath of radiation, the sensor 500 can detect the radiation and measure acharacteristic of the radiation. To facilitate sensing, the sensor 500may move with respect to the individually controllable element 102and/or the individually controllable element 102 may be moved withrespect to the sensor 500.

As a further example, an individually controllable element 102 may bemoved to a position so that radiation from the individually controllableelement 102 impinges on the beam redirecting structure 502. The beamredirecting structure 502 directs the beam to sensor 500 on the frame160. To facilitate sensing, the sensor 500 may move with respect to theindividually controllable element 102 and/or the individuallycontrollable element 102 may be moved with respect to the sensor 500. Inthis example, the individually controllable element 102 is measuredoutside of the exposure region 204.

In an embodiment, the sensor 500 may be fixed or moving. If fixed, anindividually controllable element 102 is desirably movable with respectto the fixed sensor 500 to facilitate sensing. For example, the array200 may be moved (e.g., rotated or translated) with respect to thesensor 500 (e.g., sensor 500 on the frame 160) to facilitate sensing bythe sensor 500. If sensor 500 is movable (e.g., sensor 500 on thesubstrate table 106), an individually controllable element 102 may bekept still for the sensing, or else moved to, for example, speed upsensing.

The sensor 500 may be used to calibrate one or more of the individuallycontrollable elements 102. For example, the location of the spot of anindividually controllable element 102 can be detected by the sensor 500prior to exposure and the system accordingly calibrated. The exposurecan then be regulated based on this expected location of the spot (e.g.,the position of the substrate 114 is controlled, the position of theindividually controllable element 102 is controlled, the turning OFF orON of an individually controllable element 102 is controlled, etc.).Further, calibrations may take place subsequently. For example, acalibration may take place immediately after exposure before a furtherexposure using, for example, a sensor 500 on the trailing edge of thesubstrate table 106. Calibration may take place before each exposure,after a certain number of exposures, etc. Further, the location of thespot of an individually controllable element 102 may be detected“on-the-fly” using a sensor 500 and the exposure is accordinglyregulated. The individually controllable element 102 may perhaps berecalibrated based on the “on-the-fly” sensing.

In an embodiment, one or more the individually controllable elements 102may be coded so as to be able to detect which individually controllableelement 102 is at a certain position or being used. In an embodiment,individually controllable element 102 may have a marker and a sensor 510can be used to detect the marker, which may be a RFID, a bar code, etc.For example, each of a plurality of individually controllable elements102 can be moved to be adjacent the sensor 510 to read the marker. Withknowledge of which individually controllable element 102 is adjacent thesensor 510, it is possible to know which individually controllableelement 102 is adjacent a sensor 500, is in the exposure region 204,etc. In an embodiment, each individually controllable element 102 may beused to provide radiation having a different frequency and the sensor500, 510 can be used to detect which individually controllable element102 is adjacent the sensor 500, 510. For example, each of a plurality ofindividually controllable elements 102 can be moved to be adjacent thesensor 500, 510 to receive radiation from the individually controllableelements 102 and then the sensor 500, 510 can demultiplex the receivedradiation to determine which individually controllable element 102 wasadjacent the sensor 500, 510 at a particular time. With this knowledge,it is possible to know which individually controllable element 102 isadjacent a sensor 500, is in the exposure region 204, etc.

In an embodiment, as discussed above, a position sensor may be providedto determine the position of one or more of the individuallycontrollable elements 102 in up to 6 degrees of freedom. For example,sensor 510 may be used for position detection. In an embodiment, thesensor 510 may comprise an interferometer. In an embodiment, the sensor510 may comprise an encoder which may be used to detect one or moresingle dimension encoder gratings and/or one or more two dimensionalencoder gratings.

In an embodiment, a sensor 520 may be provided to determine acharacteristic of the radiation that has been transmitted to thesubstrate. In this embodiment, sensor 520 captures radiation redirectedby the substrate. In an example use, the redirected radiation capturedby sensor 520 may be used to facilitate determining the location of thespot of radiation from an individually controllable element 102 (e.g.,misalignment of the spot of radiation from an individually controllableelement 102). In particular, the sensor 520 may capture radiationredirected from a just exposed portion of the substrate, i.e., a latentimage. A measurement of the intensity of this tail redirected radiationmay give an indication of whether the spot was properly aligned. Forexample, the repeated measurement of this tail may give a repetitivesignal, a deviation from which would indicate a misalignment of the spot(e.g., an out of phase signal can indicate misalignment). FIG. 16(B)depicts a schematic position of a detection region of sensor 520relative to an exposed region 522 of substrate 114. In this embodiment,three detection regions are shown whose results may be compared and/orcombined to facilitate recognition of the misalignment. Only onedetection region need be used, for example, the one on the left handside. In an embodiment, the detector 262 of individually controllableelement 102 may be used in similar manner as sensor 520. For example,one or more individually controllable elements 102 outside the exposureregion 204 of the arrays 200 on the right hand side may be used todetect radiation redirected from the latent image on the substrate.

FIG. 17 depicts an embodiment of a lithographic apparatus. In thisembodiment, a plurality of individually controllable elements 102 directradiation toward a rotatable polygon 600. The surface 604 of the polygon600 on which the radiation impinges redirects the radiation toward lensarray 170. Lens array 170 directs the radiation toward substrate 114.During exposure, the polygon 600 rotates about axis 602 causing therespective beams from each of the plurality of individually controllableelements 102 to move in the Y-direction across the lens array 170.Specifically, the beams will repeatedly scan in the positive Y-directionacross the lens array 170 as each new facet of the polygon 600 isimpinged with radiation. The individually controllable elements 102 aremodulated during exposure to provide the desired pattern as discussedherein. The polygon may have any number of appropriate sides. Further,the individually controllable elements 102 are modulated in timing withthe rotating polygon 600 so that the respective beams impinge on thelenses of the lens array 170. In an embodiment, a further plurality ofindividually controllable elements 102 may be provided on the oppositeside of the polygon, i.e., on the right hand side, so as to causeradiation to impinge on surface 606 of the polygon 600.

In an embodiment, a vibrating optical element may be used instead ofpolygon 600. The vibrating optical element has a certain fixed anglewith respect to the lens array 170 and may translate back forth in theY-direction to cause the beams to be scanned back and forth across thelens array 170 in the Y-direction. In an embodiment, an optical elementrotating back and forth about axis 602 through an arc may be usedinstead of polygon 600. By rotating the optical element back and forththrough an arc, the beams are caused to be scanned back and forth acrossthe lens array 170 in the Y-direction. In an embodiment, polygon 600,vibrating optical element, and/or rotating optical element has one ormore mirror surfaces. In an embodiment, polygon 600, vibrating opticalelement, and/or rotating optical element comprises a prism. In anembodiment, an acoustic-optical modulator may be used instead of polygon600. The acoustic-optical modulator can be used to scan the beams acrossthe lens array 170. In an embodiment, the lens array 170 may be placedin the radiation path between the plurality of individually controllableelements 102 and the polygon 600, vibrating optical element, rotatingoptical element, and/or acoustic-optical modulator.

Thus, generally, the width of an exposure area (e.g., the substrate) maybe covered with fewer radiation outputs than the width of thoseradiation outputs divided into the width of the exposure area. In anembodiment, this may comprise moving the radiation beam source relativeto the exposure area or moving the radiation beam relative to theexposure area.

FIG. 18 depicts a schematic cross-sectional side view of a lithographicapparatus according to an embodiment of the invention having movableindividually controllable elements 102. Like the lithographic apparatus100 shown in FIG. 5, the lithographic apparatus 100 comprises asubstrate table 106 to hold a substrate, and a positioning device 116 tomove the substrate table 106 in up to 6 degrees of freedom.

The lithographic apparatus 100 further comprises a plurality ofindividually controllable elements 102 arranged on a frame 160. In thisembodiment, each of the individually controllable elements 102 is aradiation emitting diode, e.g., a laser diode, for instance ablue-violet laser diode. The individually controllable elements 102 arearranged into an array 200 of individually controllable elements 102extending along the Y-direction. While one array 200 is shown, thelithographic apparatus may have a plurality of arrays 200 as shown, forexample, in FIG. 5.

In this embodiment, the array 200 is a rotatable plate having aplurality of spatially separated individually controllable elements 102arranged around the plate. In use, the plate rotates about its own axis206, for example, in the directions shown by the arrows in FIG. 5. Theplate of array 200 is rotated about the axis 206 using motor 216.Further, the plate of array 200 may be moved in a Z direction by motor216 so that the individually controllable elements 102 may be displacedrelative to the substrate table 106.

In this embodiment, the array 200 may have one or more fins 230 toincrease the surface area for heat dissipation. The fin(s) 230 may be,for example, on a top surface of the array 200. Optionally, one or morefurther fins 232 may be provided to cooperate with the fin(s) 230 tofacilitate heat dissipation. For example, the fin(s) 232 is able toabsorb heat from the fin(s) 230 and may comprise a fluid (e.g., liquid)conducting channel and an associated heat exchanger/pump similar to asshown in and described with respect to FIG. 7(F).

In this embodiment, a lens 242 may be located in front of eachindividually controllable element 102 and be movable with theindividually controllable element 102 (e.g., rotatable about axis A). InFIG. 18, two lenses 242 are shown and are attached to the array 200.Further, the lens 242 may be displaceable with respect to theindividually controllable element 102 (e.g., in the Z-direction).

In this embodiment, an aperture structure 248 having an aperture thereinmay be located above lens 242 between the lens 242 and the associatedindividually controllable element 102. The aperture structure 248 canlimit diffraction effects of the lens 242, the associated individuallycontrollable element 102, and/or of adjacent lenses 242/individuallycontrollable elements 102.

In this embodiment, a sensor 254 may be provided with an individuallyaddressable element 102 (or with a plurality of individually addressableelements 102 of the array 200). In this embodiment, the sensor 254 isarranged to detect focus. A focus detection beam 256 is redirected(e.g., reflected) off the substrate surface, passes through the lens 242and is directed toward a detector 262 by, e.g., a half-silvered mirror258. In an embodiment, the focus detection beam 256 may be radiationused for exposure that happens to be redirected from the substrate. Inan embodiment, the focus detection beam 256 may be a dedicated beamdirected at the substrate and which, upon redirected by the substrate,becomes the beam 256. An example focus sensor is described above withrespect to FIG. 7(O). The mirror 258 and detector 262 may be mounted tothe array 200.

In this embodiment, the control signals may be supplied to theindividually controllable elements 102 and/or one or more other devices(e.g., a sensor) by wired or wireless communication. Further, signalsfrom the individually controllable elements 102 and/or from one or moreother devices (e.g., a sensor) may be communicated to a controller. InFIG. 18, the line(s) 404 may be provided along the axis of rotation 206.In an embodiment, the line(s) 404 may be an optical line. In that case,the signal may be an optical signal where, for example, differentcontrol signals may be carried at different wavelengths. In a similarmanner to the control signals, power may be supplied to the individuallycontrollable elements 102 or one or more other devices (e.g., a sensor)by wired or wireless means. For example, in a wired embodiment, powermay be supplied by one or more lines 404, whether the same as the onesthat carry the signals or different. In a wireless embodiment, power maybe delivered by RF coupling as shown at 700.

In this embodiment, the lithographic apparatus may comprise a sensor 500to measure a characteristic of the radiation that is or to betransmitted toward the substrate by one or more individuallycontrollable elements 102. Such a sensor may be a spot sensor or atransmission image sensor. The sensor may be used to, for example,determine the intensity of radiation from an individually controllableelement 102, uniformity of radiation from an individually controllableelement 102, a cross-sectional size or area of the spot of radiationfrom an individually controllable element 102, and/or the location (inthe X-Y plane) of the spot of radiation from an individuallycontrollable element 102. In this embodiment, the sensor 500 is on theframe 160 and may be adjacent the substrate table 106 or accessiblethrough the substrate table 106.

In an embodiment, rather than having the individually controllableelements 102 being movable in the X-Y plane, the individuallycontrollable elements 102 are substantially stationary in the X-Y planeduring exposure of the substrate. This is not to say that thecontrollable elements 102 may not be movable in the X-Y plane. Forexample, they may be movable in the X-Y plane to correct their position.A possible advantage of having the controllable elements 102substantially stationary is easier power and/or data transfer to thecontrollable elements 102. A further or alternative possible advantageis improved ability to locally adjust the focus to compensate for heightdifference in the substrate that is more than the focal depth of thesystem and is on a higher spatial frequency than the pitch of movingcontrollable elements.

In this embodiment, while the controllable elements 102 aresubstantially stationary, there is at least one optical element thatmoves relative to the individually controllable elements 102. Variousarrangements of individually controllable elements 102 substantiallystationary in the X-Y plane and an optical element movable with respectthereto are described hereafter.

In the description hereafter, the term “lens” should be understoodgenerally to encompass, where the context allows, any one or combinationof various types of optical components, including refractive,reflective, magnetic, electromagnetic and electrostatic opticalcomponents, such as any refractive, reflective, and/or diffractiveoptical element that provides the same function as the referenced lens.For example, an imaging lens may be embodied in the form of aconventional refractive lens having optical power, in the form of aSchwarzschild reflective system having optical power, and/or in the formof a zone plate having optical power. Moreover, an imaging lens maycomprise non-imaging optics if the resulting effect is to produce aconverged beam on the substrate.

Further, in the description hereafter, reference is made to a pluralityof individually controllable elements 102, such as mirrors of a mirrorarray modulator or a plurality of radiation sources. However, thedescription should be understood more generally to refer to a modulatorarranged to output a plurality of beams. For example, the modulator maybe an acoustic-optical modulator to output a plurality of beams from abeam provided by a radiation source.

FIG. 19 depicts a schematic top view layout of portion of a lithographicapparatus having a plurality of individually controllable elements 102(e.g., laser diodes) that are substantially stationary in the X-Y planeand an optical element 242 movable with respect thereto according to anembodiment of the invention. In this embodiment, the plurality ofindividually controllable elements 102 are attached to a frame and aresubstantially stationary in the X-Y plane, a plurality of imaging lenses242 move substantially in the X-Y plane (as shown in FIG. 19 by theindication of the rotation of the wheel 801) with respect to thoseindividually controllable elements 102, and the substrate moves in thedirection 803. In an embodiment, the imaging lenses 242 move withrespect to the individually controllable elements 102 by rotating aboutan axis. In an embodiment, the imaging lenses 242 are mounted on astructure that rotates about the axis (e.g., in the direction shown inFIG. 19) and arranged in a circular manner (e.g., as partially shown inFIG. 19).

Each of the individually controllable elements 102 provide a collimatedbeam to a moving imaging lens 242. In an embodiment, the individuallycontrollable elements 102 are associated with one or more collimatinglenses to provide the collimated beam. In an embodiment, the collimatinglens(es) is substantially stationary in the X-Y plane and attached tothe frame to which the individually controllable elements 102 areattached.

In this embodiment, the cross-sectional width of the collimated beamsare smaller than the cross-sectional width of the imaging lenses 242.So, as soon as a collimated beam would fall completely within theoptically transmissive portion of an imaging lens 242, the individuallycontrollable element 102 (e.g., the diode laser) can be switched on. Theindividually controllable element 102 (e.g., the diode laser) is thenswitched off when the beam falls outside of the optically transmissiveportion of the imaging lens 242. Thus, in an embodiment, the beam froman individually controllable element 102 passes through a single imaginglens 242 at any one time. The resulting traversal of the imaging lens242 with respect to the beam from an individually controllable element102 yields an associated imaged line 800 on the substrate from eachindividually controllable element 102 that is turned on. In FIG. 19,three imaged lines 800 are shown relative to each of three exampleindividually controllable elements 102 in FIG. 19, although as will beapparent the other individually controllable elements 102 in FIG. 19 canproduce an associated imaged line 800 on the substrate.

In the FIG. 19 layout, the imaging lens 242 pitch may be 1.5 mm and thecross-sectional width (e.g., diameter) of the beam from each of theindividually controllable elements 102 is a little smaller than 0.5 mm.With this configuration, it is possible to write, with each individuallycontrollable element 102, a line of about 1 mm in length. So, in thisarrangement of beam diameter of 0.5 mm and an imaging lens 242 diameterof 1.5 mm, the duty cycle can be as high as 67%. With an appropriatepositioning of individually controllable elements 102 with respect tothe imaging lenses 242, a full coverage across the width of thesubstrate is possible. So, for example, if only standard 5.6 mm diameterlaser diodes are used, several concentric rings, as shown in FIG. 19, oflaser diodes can be used to get a full coverage across the width of thesubstrate. So, in this embodiment, it may be possible to use fewerindividually controllable elements 102 (e.g., laser diodes) than withusing merely a fixed array of individually controllable elements 102 orperhaps with the moving individually controllable elements 102 describedherein.

In this embodiment, each of the imaging lenses 242 should be identicalbecause each individually controllable element 102 will be imaged by allthe moving imaging lenses 242. In this embodiment, all the imaginglenses 242 are without the need to image a field although a higher NAlens is needed, for example, greater than 0.3, greater than 0.18, orgreater than 0.15. With this single element optics, diffraction limitedimaging is possible.

The focal point of the beam on the substrate is fixed to the opticalaxis of the imaging lens 242 independent of where the collimated beamenters the lens (see, e.g., FIG. 20 which depicts a schematicthree-dimensional drawing of a portion of the lithographic apparatus ofFIG. 19). A disadvantage of this arrangement is that the beam from theimaging lens 242 towards the substrate is not telecentric and as aconsequence, a focus error could occur possibly leading overlay error.

In this embodiment, adjusting the focus by using an element that is notmoving in the X-Y plane (e.g., at the individually controllable element102) will likely cause vignetting. Accordingly, desired adjustment offocus should occur in the moving imaging lens 242. This accordingly mayrequire an actuator of higher frequency than the moving imaging lens242.

FIG. 21 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing three different rotation positions of an imaging lens 242 setwith respect to an individually controllable element. In thisembodiment, the lithographic apparatus of FIGS. 19 and 20 is extended byhaving the imaging lens 242 comprise two lenses 802, 804 to receive thecollimated beam from an individually controllable element 102. Like inFIG. 19, the imaging lens 242 moves relative to an individuallycontrollable element 102 in the X-Y plane (e.g., rotates about an axiswhere the imaging lenses 242 are arranged at least partially in acircular manner). In this embodiment, the beam from an individuallycontrollable element 102 is collimated by lens 806 before reachingimaging lens 242, although in an embodiment such a lens need not beprovided. The lens 806 is substantially stationary in the X-Y plane. Thesubstrate moves in the X-direction.

The two lenses 802, 804 are arranged in the optical path of thecollimated beam from an individually controllable element 102 to thesubstrate, to make the beam towards the substrate telecentric. The lens802, between the individually controllable element 102 and the lens 804,comprises two lenses 802A, 802B with substantially equal focal length.The collimated beam from the individually controllable element 102 isfocused between the two lenses 802A, 802B such that lens 802B willcollimate the beam towards the imaging lens 804. The imaging lens 804images the beam onto the substrate.

In this embodiment, the lens 802 moves at a certain speed in the X-Yplane (e.g., certain revolutions per minute (RPM)) with respect to anindividually controllable element 102. Thus, in this embodiment, theoutgoing collimated beam from the lens 802 would have twice the speed inthe X-Y plane as the moving imaging lens 804 if it were moving at thesame speed as the lens 802. So, in this embodiment, the imaging lens 804moves at a speed, different than that of lens 802, with respect to anindividually controllable element 102. In particular, the imaging lens804 is moved in the X-Y plane at twice the speed as the lens 802 (e.g.,twice the RPM of the lens 802) so that the beams will be focusedtelecentrically on the substrate. This aligning of the outgoingcollimated beam from the lens 802 to the imaging lens 804 isschematically shown in three example positions in FIG. 21. Further,since the actual writing on the substrate will be done at twice thespeed compared to the example of FIG. 19, the power of the individuallycontrollable elements 102 should be doubled.

In this embodiment, adjusting the focus by using an element that is notmoving in the X-Y plane (e.g., at the individually controllable element102) will likely lead to loss of telecentricity and cause vignetting.Accordingly, desired adjustment of focus should occur in the movingimaging lens 242.

Further, in this embodiment, all the imaging lenses 242 are without theneed to image a field. With this single element optics, diffractionlimited imaging is possible. A duty cycle of about 65% is possible. Inan embodiment, the lenses 806, 802A, 802B and 804 may comprise 2aspherical and 2 spherical lenses.

In an embodiment, about 380 individually controllable elements 102(e.g., standard laser diodes) may be used. In an embodiment, about 1400imaging lens 242 sets may be used. In an embodiment using a standardlaser diode, about 4200 imaging lens 242 sets may be used, which may bearranged in 6 concentric rings on a wheel. In an embodiment, a rotatingwheel of imaging lenses would rotate at about 12,000 RPM.

FIG. 22 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing three different rotation positions of an imaging lens 242 setwith respect to an individually controllable element. In thisembodiment, to avoid moving lenses at different speeds as described withrespect to FIG. 21, a so called 4f telecentric in/telecentric outimaging system for moving imaging lens 242 could be used as shown inFIG. 22. The moving imaging lens 242 comprises two imaging lenses 808,810 that are moved at substantially the same speed in the X-Y plane(e.g., rotated about an axis where the imaging lenses 242 are arrangedat least partially in a circular manner) and receives a telecentric beamas an input and outputs to the substrate a telecentric imaging beam. Inthis arrangement with a magnification of 1, the image on the substratemoves twice as fast as the moving imaging lens 242. The substrate movesin the X-direction. In this arrangement, the optics would likely need toimage a field with a relatively large NA, for example, greater than 0.3,greater than 0.18, or greater than 0.15. This arrangement may not bepossible with two single element optics. Six or more elements with veryaccurate alignment tolerances may be needed to get a diffraction limitedimage. A duty cycle of about 65% is possible. In this embodiment, it isalso relatively easy to focus locally with an element that does not movealong or in conjunction with movable imaging lenses 242.

FIG. 23 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing five different rotation positions of an imaging lens 242 setwith respect to an individually controllable element. In thisembodiment, to avoid moving lenses at different speeds as described withrespect to FIG. 21 and to have optics without imaging a field as notedwith respect to FIG. 22, a combination of lenses that are substantiallystationary in the X-Y plane are combined with the moving imaging lens242. Referring to FIG. 23, an individually controllable element 102 isprovided that is substantially stationary in the X-Y plane. An optionalcollimating lens 806 that is substantially stationary in the X-Y isprovided to collimate the beam from the individually controllableelement 102 and to provide the collimated beam (having, for example, across-sectional width (e.g., diameter) of 0.5 mm) to a lens 812.

Lens 812 is also substantially stationary in the X-Y plane and focusesthe collimated beam to a field lens 814 (having, for example, across-sectional width (e.g., diameter) of 1.5 mm) of moving imaging lens242. The lens 814 has a relatively large focal length (e.g., f=20 mm).

The field lens 814 of movable imaging lens 242 moves relative to theindividually controllable elements 102 (e.g., rotates about an axiswhere the imaging lenses 242 are arranged at least partially in acircular manner). The field lens 814 directs the beam toward imaginglens 818 of the movable imaging lens 242. Like field lens 814, theimaging lens 818 moves relative to the individually controllableelements 102 (e.g., rotates about an axis where the imaging lenses 242are arranged at least partially in a circular manner). In thisembodiment, the field lens 814 moves at the substantially same speed asthe imaging lens 818. A pair of field lens 814 and imaging lens 818 arealigned with respect to each other. The substrate moves in theX-direction.

Between field lens 814 and the imaging lens 818 is a lens 816. Lens 816is substantially stationary in the X-Y plane and collimates the beamfrom field lens 814 to the imaging lens 818. The lens 816 has arelatively large focal length (e.g., f=20 mm).

In this embodiment, the optical axis of a field lens 814 should coincidewith the optical axis of the corresponding imaging lens 816. The fieldlens 814 is designed such that the beam will be folded so that the chiefray of the beam that is collimated by the lens 816 coincides with theoptical axis of the imaging lens 818. In this way the beam towards thesubstrate is telecentric.

Lenses 812 and 816 may be simple spherical lenses due to the largef-number. The field lens 814 should not affect the image quality and mayalso be a spherical element. In this embodiment, the collimating lens806 and the imaging lens 818 are lenses without the need to image field.With this single element optics, diffraction limited imaging ispossible. A duty cycle of about 65% is possible.

In an embodiment, where the movable imaging lens 242 is rotatable, atleast two concentric rings of lenses and individually controllableelements 102 are provided to obtain full coverage across the width ofthe substrate. In an embodiment, the individually controllable elements102 on these rings are arranged at a pitch of 1.5 mm. If a standardlaser diode with a diameter of 5.6 mm is used, at least 6 concentricrings may be needed for full coverage. FIGS. 24 and 25 depict thearrangement of concentric rings of individually controllable elements102 according to these arrangements. This would lead, in an embodiment,to approximately 380 individually controllable elements 102 withcorresponding lenses that are substantially stationary in the X-Y plane.The moving imaging lens 242 would have 700×6 rings=4200 sets of lenses814, 818. With this configuration, it is possible to write, with eachindividually controllable element 102, a line of about 1 mm in length.In an embodiment, about 1400 imaging lens 242 sets may be used. In anembodiment, the lenses 812, 814, 816 and 818 may comprise 4 asphericallenses.

In this embodiment, adjusting the focus by using an element that is notmoving in the X-Y plane (e.g., at the individually controllable element102) will likely lead to loss of telecentricity and cause vignetting.Accordingly, desired adjustment of focus should occur in the movingimaging lens 242. This accordingly may require an actuator of higherfrequency than the moving imaging lens 242.

FIG. 26 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention. Inthis embodiment, an optical derotator is used to couple the individuallycontrollable elements 102 that are substantially stationary in the X-Yplane to moving imaging lenses 242.

In this embodiment, the individually controllable elements 102, alongwith optional collimating lenses, are arranged in a ring. Two parabolamirrors 820, 822 reduce the ring of collimated beams from theindividually controllable elements 102 to an acceptable diameter for thederotator 824. In FIG. 26 a pechan prism is used as a derotator 824. Ifthe derotator rotates at half the speed compared to the speed of theimaging lenses 242, each individually controllable element 102 appearssubstantially stationary with respect to its respective imaging lens242. Two further parabola mirrors 826, 828 expand the ring of derotatedbeams from derotator 824 to an acceptable diameter for the movingimaging lenses 242. The substrate moves in the X-direction.

In this embodiment, each individually controllable element 102 is pairedto an imaging lens 242. Therefore, it may not be possible to mount theindividually controllable elements 102 on concentric rings and thus,full coverage across of the width of the substrate may not be obtained.A duty cycle of about 33% is possible. In this embodiment, the imaginglenses 242 are lenses without the need to image field.

FIG. 27 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention. Inthis arrangement, imaging lenses 242 are arranged to rotate around adirection extending in the X-Y plane (e.g., a rotating drum rather thana rotating wheel as described, for example, with respect to FIGS.19-26). Referring to FIG. 27, movable imaging lenses 242 are arranged ona drum arranged to rotate around, for example, the Y-direction. Movableimaging lenses 242 receive radiation from individually controllableelements 102 extending in a line in the Y-direction between the axis ofrotation of the drum and the movable imaging lenses 242. In principle, aline that would be written by the movable imaging lenses 242 of such adrum would be parallel to the scan direction 831 of the substrate.Accordingly, a derotator 830 mounted at 45° is arranged to rotate a linemade by the movable imaging lenses 242 of the drum by 90° so that theimaged line is perpendicular to the scan direction of the substrate. Thesubstrate moves in the X-direction.

For every stripe on the substrate, a circle of movable imaging lenses242 would be needed on the drum. If one such circle can write a 3 mmwidth stripe on the substrate and the substrate is 300 mm wide, 700(optics on the circumference of the drum)×100=70000 optical assembliesmay be required on the drum. It could be less if cylindrical optics areused on the drum. Further, the imaging optics in this embodiment mayneed to image a certain field which may make the optics morecomplicated. A duty cycle of about 95% is possible. An advantage of thisembodiment is that the imaged stripes can be of substantially equallength and be substantially parallel and straight. In this embodiment,it is relatively easy to focus locally with an element that does notmove along or in conjunction with movable imaging lenses 242.

FIG. 28 depicts a schematic side view layout of a portion of alithographic apparatus having individually controllable elementssubstantially stationary in the X-Y plane and an optical element movablewith respect thereto according to an embodiment of the invention andshowing five different rotation positions of an imaging lens 242 setwith respect to an individually controllable element.

Referring to FIG. 28, an individually controllable element 102 isprovided that is substantially stationary in the X-Y plane. The movableimaging lens 242 comprises a plurality of sets of lenses, each set oflenses comprising a field lens 814 and an imaging lens 818. Thesubstrate moves in the X-direction.

The field lens 814 (e.g., a spherical lens) of movable imaging lens 242moves relative to the individually controllable elements 102 indirection 815 (e.g., rotates about an axis where the imaging lenses 242are arranged at least partially in a circular manner). The field lens814 directs the beam toward imaging lens 818 (e.g., an aspherical lenssuch as a double aspherical surface lens) of the movable imaging lens242. Like field lens 814, the imaging lens 818 moves relative to theindividually controllable elements 102 (e.g., rotates about an axiswhere the imaging lenses 242 are arranged at least partially in acircular manner). In this embodiment, the field lens 814 moves at thesubstantially same speed as the imaging lens 818.

The focal plane of the field lens 814 coincides at location 815 with theback focal plane of the imaging lens 818 which gives a telecentricin/telecentric out system. Contrary to the arrangement of FIG. 23, theimaging lens 818 images a certain field. The focal length of the fieldlens 814 is such that the field size for the imaging lens 818 is smallerthan 2 to 3 degrees half angle. In this case it is still possible to getdiffraction limited imaging with one single element optics (e.g., adouble aspherical surface single element). The field lenses 814 arearranged be mounted without spacing between the individual field lenses814. In this case the duty cycle of the individually controllableelements 102 can be about 95%.

The focal length of the imaging lenses 818 is such that, with a NA of0.2 at the substrate, these lenses will not become larger than thediameter of the field lenses 814. A focal length of the imaging lens 818equal to the diameter of the field lens 814 will give a diameter of theimaging lens 818 that leaves enough space for mounting the imaging lens818.

Due to the field angle, a slightly larger line than the pitch of thefield lenses 814 can be written. This gives an overlap, also dependingon the focal length of the imaging lens 818, between the imaged lines ofneighboring individually controllable elements 102 on the substrate.Accordingly, the individually controllable elements 102 may be mountedon the same pitch as the imaging lenses 242 on one ring.

FIG. 29 depicts a schematic three-dimensional drawing of a portion ofthe lithographic apparatus of FIG. 28. In this depiction, 5 individuallycontrollable elements 102 are depicted with 5 associated movable imaginglens sets 242. As will be apparent, further individually controllableelements 102 and associated movable imaging lens sets 242 may beprovided. The substrate moves in the X-direction as shown by arrow 829.In an embodiment, the field lenses 814 are arranged without spacingbetween. A pupil plane is located at 817.

To avoid relatively small double aspherical imaging lenses 818, reducethe amount of optics of the moving imaging lenses 242 and to usestandard laser diodes as individually controllable elements 102, thereis a possibility in this embodiment to image multiple individuallycontrollable elements 102 with a single lens set of the movable imaginglenses 242. As long as an individually controllable element 102 istelecentrically imaged on the field lens 814 of each movable imaginglens 242, the corresponding imaging lens 818 will re-image the beam fromthe individually controllable element 102 telecentrically on thesubstrate. If, for example 8 lines are written simultaneously, the fieldlens 814 diameter and the focal distance of the imaging lens 818 can beincreased by a factor 8 with the same throughput while the amount ofmovable imaging lenses 242 can be decreased by a factor 8. Further, theoptics that are substantially stationary in the X-Y plane could bereduced since a part of the optics needed for imaging the individuallycontrollable elements 102 on the field lenses 814 could be common. Suchan arrangement of 8 lines being written simultaneously by a singlemovable imaging lens 242 set is schematically depicted in FIG. 30 withrotation axis 821 of the imaging lens 242 set and the radius 823 of theimaging lens 242 set from the rotation axis 821. Going from a pitch of1.5 mm to 12 mm (when 8 lines are written simultaneously by a singlemovable imaging lens 242 set) leaves enough space for mounting standardlaser diodes as individually controllable elements 102. In anembodiment, 224 individually controllable elements 102 (e.g., standardlaser diodes) may be used. In an embodiment, 120 imaging lens 242 setsmay be used. In an embodiment, 28 substantially stationary optics setsmay be used with the 224 individually controllable elements 102.

In this embodiment, it is also relatively easy to focus locally with anelement that does not move along or in conjunction with movable imaginglenses 242. As long as the telecentric images of the individuallycontrollable elements 102 on the field lens 814 are moved along theoptical axis and kept telecentric, the focus of the images on thesubstrate will only change and the images will remain telecentric. FIG.31 depicts a schematic arrangement to control focus with a movingrooftop in the arrangement of FIGS. 28 and 29. Two folding mirrors 832with a rooftop (e.g., a prism or a mirror set) 834 are placed in thetelecentric beams from the individually controllable elements 102 beforethe field lens 814. By moving the rooftop 834 away or towards thefolding mirrors 832 in the direction 833, the image is shifted along theoptical axis and therefore also with respect to the substrate. Becausethere is a large magnification along the optical axis since the axialfocus change is equal to the quadratic ratio of the F/numbers, a 25 μmdefocus at the substrate with a F/2.5 beam will give a focus shift atthe field lens 814 with a f/37.5 beam of 5.625 mm (37.5/2.5)². Thismeans that the rooftop 834 has to move half of that.

FIG. 32 depicts a schematic cross-sectional side view of a lithographicapparatus according to an embodiment of the invention havingindividually controllable elements substantially stationary in the X-Yplane and an optical element movable with respect thereto according toan embodiment of the invention. While FIG. 32 depicts an arrangementsimilar to FIG. 23, it may be modified as appropriate to suit any of theembodiments of FIGS. 19-22 and/or FIGS. 24-31.

Referring to FIG. 32, the lithographic apparatus 100 comprises asubstrate table 106 to hold a substrate, and a positioning device 116 tomove the substrate table 106 in up to 6 degrees of freedom.

The lithographic apparatus 100 further comprises a plurality ofindividually controllable elements 102 arranged on a frame 160. In thisembodiment, each of the individually controllable elements 102 is aradiation emitting diode, e.g., a laser diode, for instance ablue-violet laser diode. The individually controllable elements 102 arearranged on a frame 838 and extend along the Y-direction. While oneframe 838 is shown, the lithographic apparatus may have a plurality offrames 838 as shown similarly as arrays 200 in, for example, FIG. 5.Further arranged on the frame 838 are lenses 812 and 816. Frame 838 andthus individually controllable elements 102 and lenses 812 and 816 aresubstantially stationary in the X-Y plane. Frame 838, individuallycontrollable elements 102 and lenses 812 and 816 may be moved in theZ-direction by actuator 836.

In this embodiment, a frame 840 is provided that is rotatable. Arrangedon the frame 840 are field lenses 814 and imaging lenses 818, wherein acombination of a field lens 814 and an imaging lens 818 forms a movableimaging lens 242. In use, the plate rotates about its own axis 206, forexample, in the directions shown by the arrows in FIG. 5 with respect toarrays 200. The frame 840 is rotated about the axis 206 using motor 216.Further, the frame 840 may be moved in a Z direction by motor 216 sothat the movable imaging lenses 242 may be displaced relative to thesubstrate table 106.

In this embodiment, an aperture structure 248 having an aperture thereinmay be located above lens 812 between the lens 812 and the associatedindividually controllable element 102. The aperture structure 248 canlimit diffraction effects of the lens 812, the associated individuallycontrollable element 102, and/or of adjacent lenses 812/individuallycontrollable elements 102.

In an embodiment, the lithographic apparatus 100 comprises one or moremovable plates 890 (e.g. a rotatable plate, for instance a rotatabledisc) comprising optical elements, e.g. lenses. In the embodiment ofFIG. 32, a plate 890 with field lenses 814 and a plate 890 with imaginglenses 818 is shown. In an embodiment, the lithographic apparatus isabsent any reflective optical elements that rotate when in use. In anembodiment, the lithographic apparatus is absent any reflective opticalelements, which receive radiation from any or all the individuallycontrollable elements 102, that rotate when in use. In an embodiment,one or more (e.g. all) plates 890 are substantially flat, e.g. have nooptical elements (or parts of optical elements) sticking out above orbelow one or more surfaces of the plate. This may be achieved, forinstance, by ensuring the plate 890 is sufficiently thick (i.e. at leastthicker than the height of the optical elements and positioning theoptical elements such that they do not stick out) or by providing a flatcover plate over the plate 890 (not shown). Ensuring one or moresurfaces of the plate is substantially flat may assist in, e.g., noisereduction when the apparatus is in use.

FIG. 33 schematically depicts a schematic cross-sectional side view of apart of a lithographic apparatus. In an embodiment, the lithographicapparatus has individually controllable elements substantiallystationary in the X-Y plane as described further below, however it neednot be the case. The lithographic apparatus 900 comprises a substratesupport 902 to hold a substrate, and a positioning device 904 to movethe substrate support 902 in up to 6 degrees of freedom. The substratemay be a resist-coated substrate (e.g. a silicon wafer or a glass plate)or a flexible substrate (e.g., a foil).

The lithographic apparatus 900 further comprises a plurality ofindividually controllable self-emissive contrast devices 906 configuredto emit a plurality of beams. In an embodiment, the self-emissivecontrast device 906 is a radiation emitting diode, such as a lightemitting diode (LED), an organic LED (OLED), a polymer LED (PLED), or alaser diode (e.g., a solid state laser diode). In an embodiment, each ofthe individually controllable elements 906 is a blue-violet laser diode(e.g., Sanyo model no. DL-3146-151). Such diodes may be supplied bycompanies such as Sanyo, Nichia, Osram, and Nitride. In an embodiment,the diode emits radiation having a wavelength of about 365 nm or about405 nm. In an embodiment, the diode can provide an output power selectedfrom the range of 0.5-200 mW. In an embodiment, the size of laser diode(naked die) is selected from the range of 100-800 micrometers. In anembodiment, the laser diode has an emission area selected from the rangeof 1-5 micrometers². In an embodiment, the laser diode has a divergenceangle selected from the range of 7-44 degrees. In an embodiment, thediodes have a configuration (e.g., emission area, divergence angle,output power, etc.) to provide a total brightness more than or equal toabout 6.4×10⁸ W/(m²·sr).

The self-emissive contrast devices 906 are arranged on a frame 908 andmay extend along the Y-direction and/or the X direction. While one frame908 is shown, the lithographic apparatus may have a plurality of frames908. Further arranged on the frame 908 is lens 920. Frame 908 and thusself-emissive contrast device 906 and lens 920 are substantiallystationary in the X-Y plane. Frame 908, self-emissive contrast devices906 and lens 920 may be moved in the Z-direction by actuator 910.Alternatively or additionally, lens 920 may be moved in the Z-directionby an actuator related to the particular lens 920. Optionally, each lens920 may be provided with an actuator.

The self-emissive contrast device 906 may be configured to emit a beamand the projection system 920, 924 and 930 may be configured to projectthe beam onto a target portion of the substrate. The self-emissivecontrast device 906 and the projection system form an optical column.The lithographic apparatus 900 may comprise an actuator (e.g. motor 918)to move the optical column or a part thereof with respect to thesubstrate. Frame 912 with arranged thereon field lens 924 and imaginglens 930 may be rotatable with the actuator. A combination of field lens924 and imaging lens 930 forms movable optics 914. In use, the frame 912rotates about its own axis 916, for example, in the directions shown bythe arrows in FIG. 34. The frame 912 is rotated about the axis 916 usingan actuator e.g. motor 918. Further, the frame 912 may be moved in a Zdirection by motor 910 so that the movable optics 914 may be displacedrelative to the substrate support 902.

An aperture structure 922 having an aperture therein may be locatedabove lens 920 between the lens 920 and the self-emissive contrastdevice 906. The aperture structure 922 can limit diffraction effects ofthe lens 920, the associated self-emissive contrast device 906, and/orof an adjacent lens 920/self-emissive contrast device 906. In FIG. 33two optical columns are shown at opposite sides of the lithographicapparatus. In practice, the lithographic apparatus may comprise morethan two optical columns distributed over, e.g., a periphery of thelithographic apparatus. Each optical column includes one or moreself-emissive contrast devices 906 and a stationary part of theprojection system 920. The rotatable part of an optical column,including lenses 924, 930, may be used with respect to a plurality ofoptical columns, e.g., when frame 912 is rotated.

The depicted apparatus may be used by rotating the frame 912 andsimultaneously moving the substrate on the substrate support 902underneath the optical column. The self-emissive contrast device 906 canemit a beam through the lenses 920, 924, and 930 when the lenses aresubstantially aligned with each other. By moving the lenses 924 and 930,the image of the beam on the substrate is scanned over a portion of thesubstrate. By simultaneously moving the substrate on the substrate table902 underneath the optical column, the portion of the substrate which issubjected to an image of the self-emissive contrast device 906 is alsomoving. By switching the self-emissive contrast device 906 “on” and“off” (e.g., having no output or output below a threshold when it is“off” and having an output above a threshold when it is “on”) at highspeed under control of a controller, controlling the rotation of theoptical column or part thereof, controlling the intensity of theself-emissive contrast device 906, and controlling the speed of thesubstrate, a desired pattern can be imaged in the resist layer on thesubstrate.

FIG. 34 depicts a schematic top view of the lithographic apparatus ofFIG. 33 having self-emissive contrast devices 906. Like the lithographicapparatus 900 shown in FIG. 33, the lithographic apparatus 900 comprisesa substrate support 902 to hold a substrate 928, a positioning device904 to move the substrate support 902 in up to 6 degrees of freedom, analignment/level sensor 932 to determine alignment between theself-emissive contrast device 906 and the substrate 928, and todetermine whether the substrate 928 is at level with respect to theprojection of the self-emissive contrast device 906. As depicted thesubstrate 928 has a rectangular shape, however round shape substratesmay be processed.

The self-emissive contrast device 906 is arranged on a frame 926. Theself-emissive contrast device 906 may be a radiation emitting diode,e.g., a laser diode, for instance a blue-violet laser diode. As shown inFIG. 34, the contrast devices 906 may be arranged as an array extendingin the X-Y plane, one or more contrast devices 906 being associated witheach optical column. The array may be an elongate line. In anembodiment, the array may be a single dimensional array of self-emissivecontrast devices 906. In an embodiment, the array may be a twodimensional array of self-emissive contrast devices 906. The contrastdevices 906 are divided over four lithographic wheels as shown in FIG.34. Each lithographic wheel includes a number of optical columns mountedon a stationary frame 908 and a rotatable frame 912. Within alithographic wheel, the optical columns may share a part of the opticalcolumn mounted on the rotatable frame 912, such as lenses 924, 930, i.e.when the frame is rotated the lenses 924, 930 may subsequently be usedby different optical columns of the lithographic wheel.

A rotatable frame 912 may be provided which may be rotating in adirection depicted by the respective arrow. The rotatable frame may beprovided with lenses 924, 930 (shown in FIG. 33) to provide an image ofeach of the self-emissive contrast devices 906. In this application, theterms “radial” and “tangential” are used in relation with the rotatableframe 912 and its longitudinal axis 916. The apparatus may be providedwith an actuator to rotate the rotatable frame 912, and therewith therotary part of the optical column including the lenses 924, 930.

The lithographic apparatus is part of a production process in which, forinstance, flat panel displays or chips are manufactured. To streamlinethe production process it is desirable that the production time of thelithographic apparatus, i.e. the time to create a pattern on the wholesurface of the substrate, is optimized. In many production processes theproduction time in a single stage of the production process is limitedto a time period, for example 60 seconds. In this time period, a patternwith the desired resolution has to be provided on the completesubstrate.

During the creation of the pattern the substrate is desirably moved witha substantially constant scanning speed vscan in a scanning direction.To move the substrate at a substantially constant speed, time isrequired to accelerate and to decelerate the substrate. To minimize thetime for acceleration and deceleration, the whole substrate is desirablyexposed to a beam creating a pattern in a single scanning movement ofthe substrate.

Therefore, the substrate may be divided in the direction perpendicularto the scanning direction in a number of strips 934, each strip beingassociated with its own optical column, each optical column comprising anumber of self-emissive contrast devices 906 and a stationary part ofthe projection system 920. The rotatable part of the optical column,including lenses 924, 930, may be used with respect to other strips 934covered by the rotatable frame 912. Each strip is divided in thescanning direction in a number of adjacent and partially overlappingtarget portions 936. During the scanning movement of the substrate thetarget portions 936 of a single strip 934 are subsequently exposed tobeams of the self-emissive contrast devices 906 of the associatedoptical column. Desirably, for all strips in the direction perpendicularto the scanning direction, an optical column is provided so that apattern can be created on the substrate by a single scan.

FIG. 35 depicts schematically a number of target portions 936 projectedor to be projected on a substrate 928. The circumference of therotatable frame 912 is schematically shown. In the directionperpendicular to the scanning direction indicated by scanning speedVscan, the substrate is divided in a number of strips 934, each strip934 being associated with an optical column, or at least the stationarypart thereof. On these strips 934 a number of target portions 936 areindicated. The target portions 936 have an overlap 938 with adjacenttarget portions 936 of adjacent strips 934 and an overlap 940 withadjacent target portions 936 within the same strip 934. This overlap maybe required to obtain a reliable pattern over the whole substratesurface.

A part of the projection system of each optical column, including lenses924, 930 is mounted on the rotatable frame 912. In practice, multiplelenses 924, 930 will be divided over the circumference of the rotatableframe 912, and adjacent lenses 924, 930 on the circumference aredesirably located close to each other. During projection, the rotatableframe 912 will rotate and for each target portion a different set oflenses 924, 930 may be used for projection of a pattern. Thus, eachstrip 934 is in particular associated with one or more self-emissivecontrast devices 906 and the parts of the projection system mounted onthe stationary frame 926, while the lenses 924, 930 are used by more,desirably all self-emissive contrast devices 906, during projection of apattern on the different target portions 936 associated with therespective rotatable frame 912.

The time required for the single scanning movement is referred to as theexposure time Texp. The substrate has a length Lsub and a width.Assuming the substrate is arranged in the lithographic apparatus suchthat the length of the substrate is in the same direction as thescanning direction, the exposure time Texp of the substrate is at leastthe length of the substrate Lsub divided by the scanning speed vscan.

However, since not all optical columns have to be arranged at the sameposition in the scanning direction (see FIG. 34), there will be extratime required for the substrate to move from the first optical column tothe last optical column in the scanning direction. This distance isreferred to as the pitch length Lpitch (shown in FIG. 34). The exposuretime Texp substantially corresponds to the sum of the length of thesubstrate Lsub plus the pitch length Lpitch divided by the scan speedvscan. Thus,

${T\;\exp} = \frac{{Lsub} + {Lpitch}}{v_{scan}}$

The time required for exposure of a beam on a target portion 936 equalsto the height Htp of the target portion in the scanning direction,divided by the scanning speed vscan. During this time the beam will runover the width Wtp of the target portion with a rotation speed Vwheel atthe location of the lenses 924, 930. This rotation speed is determinedby 2 times pi multiplied by the radius Rwheel of the lenses 924, 930 onthe rotatable frame 912, i.e. the radius of the central axis of theoptical column, multiplied by the rotary frequency ωwheel of the wheel.

It is desirable to have multiple self-emissive contrast devices peroptical column so that the relative overlap of adjacent target portionsin the scanning direction is not too large. At the same time the numberof self-emissive contrast devices per column is practically limited bythe size and complexity of the lens system required for an increasingnumber of self-emissive contrast devices within an optical column.

The height Htp of the target portion is mainly determined by the numberof self-emissive contrast devices per optical column, the radial pitchbetween the self-emissive contrast devices within an optical column, andthe spot width of the outer self-emissive contrast devices at the imageplane.

The radial pitch, Lradpitch, at the projection image plane on thesubstrate, is selected from the range of 50% to 95%, in the range of 70%to 90%, or in the range of 75% to 85% of a projection resolution of thelithographic apparatus. In earlier lithographic systems, it was believedthat the radial pitch should be chosen substantially equal to theprojection resolution. Unexpectedly, a radial pitch between theself-emissive contrast devices of an optical column which is in theseranges has a large effect on the resulting quality. With a radial pitchwithin the above indicated ranges the desired resolution can be obtainedmore reliably.

The projection resolution of the lithographic apparatus is smaller thanor equal to 10 μm, smaller than or equal to 5 μm, or smaller than orequal to 2 μm. In an embodiment, the projection resolution is about 1μm, and the radial pitch Lradpitch is about 0.8 μm.

When it is desired to create a pattern on a larger substrate having alarger substrate length Lsub within the same exposure time Texp or whenit is desired to increase the resolution within the same exposure timeTexp, a number of the above described parameters of the lithographicapparatus can be adapted to fulfill such a requirement.

Generally, it will be desirable to decrease the relative exposure time,i.e. the exposure time divided by the substrate length. Decrease of therelative exposure time means that more substrate length can be processedin the same process time.

For instance, the number of self-emissive contrast devices per opticalcolumn can be increased. This has an advantage that the overlap betweenadjacent target portions in the scanning direction may become smaller,but also that the height of the target portion Htp becomes larger.Practically, an increase in the number of self-emissive contrast devicesto a larger number, for instance more than 20, results in a relativelylarge and complex lens system for each optical column.

The number of self-emissive contrast devices per optical column isdesirably in the range of 2 to 40 diodes per optical column, in therange of 5 to 20 diodes per optical column, or in the range of 8 to 15diodes per optical column.

Increasing the radial pitch between the self-emissive contrast deviceswithin an optical column will also result in an increase of the heightHtp of the target portion. This has a positive decreasing effect on theexposure time. However, the radial pitch also relates to the projectionresolution of the pattern projected on the substrate. Therefore, theradial pitch will usually not be increased to decrease the relativeexposure time.

Increasing the diameter of the rotatable frame 912 or increasing therotating frequency ωwheel will also result in a decrease in the relativeexposure time. However, an increase of these parameters results in arelatively large rotation speed at the circumference of the rotatableframe 912, in particular at the lenses 924, 930. Such large rotationspeed vwheel may result in turbulence or heat generation at the lenses924, 930 which may have a substantial negative effect on the projectionquality of the projection system. Thus, the maximum size of therotatable frame 912 is limited by the dimensions of the lithographicapparatus itself. An increase of the diameter of the rotatable frame 912may lead to an increase of the distance between the optical columns ofdifferent rotatable frames 912 in the scanning direction, resulting in acounter effect on the relative exposure time.

The rotating frequency ωwheel of the rotatable frame 912 lies desirablyin the range of 2500 to 10000 rpm, in the range of 4000 to 6000 rpm, orin the range of 4500 to 5000 rpm, while the radius Rwheel of the lenses924, 930, i.e. the location, in particular the central axis, of theoptical column on the rotatable frame 912, is desirably in the range of50 to 500 mm, in the range of 100 to 350 mm, or in the range of 200 to250 mm.

The resulting rotation speed Vwheel of the lenses 924, 930 is desirablyin the range of 25 to 400 m/s, in the range of 50 to 200 m/s, or in therange of 75 to 140 m/s.

Another method to decrease the relative exposure time is to decrease thewidth of a strip 934, and therewith the width of a target portion Wtp inthe tangential direction. However, decrease of the strip width will alsorequire more optical columns since there will be more strips in thedirection perpendicular to the scanning direction. Practically, it willbe desirable that the number of optical columns be limited.

The width of a target portion Wtp is desirably in the range of 5 to 40mm, in the range of 8 to 20 mm, or in the range of 10 to 15 mm.

Each optical column desirably comprises in the range of 10 to 100stationary optical column parts, in the range of 20 to 50 stationaryoptical column parts, or in the range of 25 to 30 stationary opticalcolumn parts.

Each rotatable frame 912 desirably comprises in the range of 25 to 400lenses 924, 930 divided over the circumference of the rotatable frame912, in the range of 50 to 200 lenses 924, 930 divided over thecircumference of the rotatable frame 912, or in the range of 80 to 110lenses 924, 930 divided over the circumference of the rotatable frame912. The lenses 924, 930 are desirably arranged directly adjacent toeach other.

In order to obtain a small relative exposure time, it is desirable tokeep the distance Lpitch between the optical columns in the scanningdirection as small as possible so that the scanning length, i.e. thesubstrate length Lsub plus the pitch length Lpitch, is kept as small aspossible.

When it is desired to increase the projection resolution, the radialpitch between the self-emissive contrast devices within an opticalcolumn may be decreased. However, this will lead, without furthermeasurements, to a smaller height of the target portion Htp, and thus toa larger relative exposure time.

As described above, the relative exposure time can be decreased byincreasing the number of self-emissive contrast devices per opticalcolumn, increasing the diameter of the rotatable frame 912, increasingthe rotating frequency ωwheel of the rotatable frame 912, and/ordecreasing the width Wtp of a target portion to compensate for thedecrease in relative exposure time due to the smaller projectionresolution.

Embodiments are also provided below in numbered clauses:

1. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a modulator configured to expose an exposure area of the substrate to aplurality of beams modulated according to a desired pattern; and

a projection system configured to project the modulated beams onto thesubstrate and comprising an array of lenses to receive the plurality ofbeams, the projection system configured to move the array of lenses withrespect to the modulator during exposure of the exposure area.

2. The lithographic apparatus of embodiment 1, wherein each lenscomprises at least two lenses arranged along a beam path of at least oneof the plurality of beams from the modulator to the substrate.

3. The lithographic apparatus of embodiment 2, wherein a first lens ofthe at least two lenses comprises a field lens and a second lens of theat least two lenses comprises an imaging lens.

4. The lithographic apparatus of embodiment 3, wherein the focal planeof the field lens coincides with the back focal plane of the imaginglens.

5. The lithographic apparatus of embodiment 3 or embodiment 4, whereinthe imaging lens comprises a double aspherical surface lens.

6. The lithographic apparatus of any one of embodiments 3-5, wherein thefocal length of the field lens is such that the field size for theimaging lens is smaller than 2 to 3 degrees half angle.

7. The lithographic apparatus of any one of embodiments 3-6, wherein thefocal length of the imaging lens is such that, with a NA of 0.2 at thesubstrate, the imaging lens does not become larger than the diameter ofthe field lens.

8. The lithographic apparatus of embodiment 7, wherein the focal lengthof the imaging lens is equal to the diameter of the field lens.

9. The lithographic apparatus of any one of embodiments 3-8, wherein aplurality of the beams are imaged with a single combination of the fieldlens and the imaging lens.

10. The lithographic apparatus of any one of embodiments 3-9, furthercomprising a focus control device arranged along a beam path of at leastone of the plurality of beams from the modulator to the field lens.

11. The lithographic apparatus of embodiment 10, wherein the focuscontrol device comprises a folding mirror and a movable rooftop.

12. The lithographic apparatus of embodiment 3, further comprising alens in the path to collimate the beam from the first lens to the secondlens.

13. The lithographic apparatus of embodiment 12, wherein the lens in thepath to collimate the beam is substantially stationary relative to themodulator.

14. The lithographic apparatus of any one of embodiments 3, 12 or 13,further comprising a lens in the path between the modulator and thefirst lens, to focus at least one of the plurality of beams toward thefirst lens.

15. The lithographic apparatus of embodiment 14, wherein the lens in thepath to focus the beam is substantially stationary relative to themodulator.

16. The lithographic apparatus of any one of embodiments 3 or 12-15,wherein the optical axis of the field lens coincides with the opticalaxis of the imaging lens.

17. The lithographic apparatus of embodiment 2, wherein a first lens ofthe at least two lenses comprises at least two sub-lenses, wherein atleast one of the plurality of beams is focused intermediate the twosub-lenses.

18. The lithographic apparatus of embodiment 17, wherein each of the atleast two sub-lenses has a substantially equal focal length.

19. The lithographic apparatus of any one of embodiments 2, 17 or 18,wherein the first lens is arranged to output a collimated beam toward asecond lens of the at least two lenses.

20. The lithographic apparatus of any one of embodiments 2 or 17-19,configured to move a first lens of the at least two lenses at adifferent speed than a second lens of the at least two lenses.

21. The lithographic apparatus of embodiment 20, wherein the speed ofthe second lens is twice that of the first lens.

22. The lithographic apparatus of embodiment 1, wherein each lenscomprises a 4f telecentric in/telecentric out imaging system.

23. The lithographic apparatus of embodiment 22, wherein the 4ftelecentric in/telecentric out imaging system comprises at least 6lenses.

24. The lithographic apparatus of embodiment 1, further comprising aderotator between the modulator and the array of lenses.

25. The lithographic apparatus of embodiment 24, wherein the derotatorcomprises a pechan prism.

26. The lithographic apparatus of embodiment 24 or embodiment 25,wherein the derotator is arranged to move at half the speed of the arrayof lenses.

27. The lithographic apparatus of any one of embodiments 24-26, furthercomprising a parabola mirror to reduce the size of the beams between themodulator and the derotator.

28. The lithographic apparatus of any one of embodiments 24-27, furthercomprising a parabola mirror to increase the size of the beams betweenthe derotator and the array of lenses.

29. The lithographic apparatus of any one of embodiments 1-28, whereinthe array of lenses are rotated with respect to the modulator.

30. The lithographic apparatus of any one of embodiments 1-29, whereinthe modulator comprises a plurality of individually controllableradiation sources to emit electromagnetic radiation.

31. The lithographic apparatus of any one of embodiments 1-29, whereinthe modulator comprises a micromirror array.

32. The lithographic apparatus of any one of embodiments 1-29, whereinthe modulator comprises a radiation source and an acoustic-opticalmodulator.

33. A device manufacturing method comprising:

providing a plurality of beams modulated according to a desired pattern;and

projecting the plurality of beams onto a substrate using an array oflenses that receive the plurality of beams; and

moving the array of lenses with respect to the beams during theprojecting.

34. The method of embodiment 33, wherein each lens comprises at leasttwo lenses arranged along a beam path of at least one of the pluralityof beams from a source of the at least one beam to the substrate.

35. The method of embodiment 34, wherein a first lens of the at leasttwo lenses comprises a field lens and a second lens of the at least twolenses comprises an imaging lens.

36. The method of embodiment 35, wherein the focal plane of the fieldlens coincides with the back focal plane of the imaging lens.

37. The method of embodiment 35 or embodiment 36, wherein the imaginglens comprises a double aspherical surface lens.

38. The method of any one of embodiments 35-37, wherein the focal lengthof the field lens is such that the field size for the imaging lens issmaller than 2 to 3 degrees half angle.

39. The method of any one of embodiments 35-38, wherein the focal lengthof the imaging lens is such that, with a NA of 0.2 at the substrate, theimaging lens does not become larger than the diameter of the field lens.

40. The method of embodiment 39, wherein the focal length of the imaginglens is equal to the diameter of the field lens.

41. The method of any one of embodiments 35-40, wherein a plurality ofthe beams are imaged with a single combination of the field lens and theimaging lens.

42. The method of any one of embodiments 35-41, further comprising usinga focus control device between a source of at least one of the pluralityof beams and the field lens.

43. The method of embodiment 42, wherein the focus control devicecomprises a folding mirror and a movable rooftop.

44. The method of embodiment 35, further comprising collimating the atleast one beam between the first lens and the second lens using a lens.

45. The method of embodiment 44, wherein the lens to collimate the atleast one beam is substantially stationary relative to the at least onebeam.

46. The method of any one of embodiments 35, 44 or 45, furthercomprising focusing at least one of the plurality of beams toward thefirst lens using a lens in the path between a source of the at least onebeam and the first lens.

47. The method of embodiment 46, wherein the lens to focus the at leastone beam is substantially stationary relative to the at least one beam.

48. The method of any one of embodiments 35 or 44-47, wherein theoptical axis of the field lens coincides with the optical axis of thecorresponding imaging lens.

49. The method of embodiment 34, wherein a first lens of the at leasttwo lenses comprises at least two sub-lenses, wherein at least one ofthe plurality of beams is focused intermediate the two sub-lenses.

50. The method of embodiment 49, wherein each of the at least twosub-lenses has a substantially equal focal length.

51. The method of any one of embodiments 34, 49 or 50, wherein the firstlens is arranged to output a collimated beam toward a second lens of theat least two lenses.

52. The method of any one of embodiments 34 or 49-51, comprising movinga first lens of the at least two lenses at a different speed than asecond lens of the at least two lenses.

53. The method of embodiment 52, wherein the speed of the second lens istwice that of the first lens.

54. The method of embodiment 33, wherein each lens comprises a 4ftelecentric in/telecentric out imaging system.

55. The method of embodiment 54, wherein the 4f telecentricin/telecentric out imaging system comprises at least 6 lenses.

56. The method of embodiment 33, further comprising derotating the beamsusing a derotator between a source of the beams and the array of lenses.

57. The method of embodiment 56, wherein the derotator comprises apechan prism.

58. The method of embodiment 56 or embodiment 57, comprising moving thederotator at half the speed of the array of lenses.

59. The method of any one of embodiments 56-58, further comprisingreducing the size of the beams between a source of the beam and thederotator using a parabola mirror.

60. The method of any one of embodiments 56-59, further comprisingincreasing the size of the beams between the derotator and the array oflenses using a parabola mirror.

61. The method of any one of embodiments 33-60, comprising rotating thearray of lenses with respect to the beams.

62. The method of any one of embodiments 33-61, wherein each of aplurality of individually controllable radiation sources emit each ofthe plurality of beams.

63. The method of any one of embodiments 33-61, wherein a micromirrorarray emits the plurality of beams.

64. The method of any one of embodiments 33-61, wherein a radiationsource and an acoustic-optical modulator produce the plurality of beams.

65. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources to emit electromagnetic radiation, configured toexpose an exposure area of the substrate to a plurality of beamsmodulated according to a desired pattern; and

a projection system configured to project the modulated beams onto thesubstrate and comprising an array of lenses to receive the plurality ofbeams, the projection system configured to move the array of lenses withrespect to the individually controllable radiation sources duringexposure of the exposure area.

66. A device manufacturing method comprising:

providing a plurality of beams modulated according to a desired patternusing a plurality of individually controllable radiation sources; and

projecting the plurality of beams onto a substrate using an array oflenses that receive the plurality of beams; and

moving the array of lenses with respect to the individually controllableradiation sources during the projecting.

67. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a modulator configured to expose an exposure area of the substrate to aplurality of beams modulated according to a desired pattern; and

a projection system configured to project the modulated beams onto thesubstrate and comprising a plurality of arrays of lenses to receive theplurality of beams, each of the arrays separately arranged along thebeam path of the plurality of beams.

68. The lithographic apparatus of embodiment 67, wherein the projectionsystem is configured to move the arrays of lenses with respect to themodulator during exposure of the exposure area.

69. The lithographic apparatus of embodiment 67 or embodiment 68,wherein the lenses of each array are arranged in a single body.

70. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources to emit electromagnetic radiation, configured toexpose an exposure area of the substrate to a plurality of beamsmodulated according to a desired pattern, and configured to move theplurality of radiation sources with respect to the exposure area duringexposure of the exposure area such that only less than all of theplurality of radiation sources can expose the exposure area at any onetime; and

a projection system configured to project the modulated beams onto thesubstrate.

71. A lithographic apparatus comprising:

a plurality of individually controllable radiation sources configured toprovide a plurality of beams modulated according to a desired pattern,at least one radiation source of the plurality of radiation sourcesmovable between a location where it emits radiation and a location whereit does not;

a substrate holder constructed to hold a substrate; and

a projection system configured to project the modulated beams onto thesubstrate.

72. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources to emit electromagnetic radiation, configured toexpose an exposure area of the substrate to a plurality of beamsmodulated according to a desired pattern, and configured to move atleast one radiation source of the plurality of radiation sources withrespect to the exposure area during exposure of the exposure area suchthat radiation from the at least one radiation source at the same timeabuts or overlaps radiation from at least one other radiation source ofthe plurality of radiation sources; and

a projection system configured to project the modulated beams onto thesubstrate.

73. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a plurality of individually controllable radiation sources configured toprovide a plurality of beams modulated according to a desired pattern toan exposure area of the substrate, at least one radiation source of theplurality of radiation sources movable between a location where it canemit radiation to the exposure area and a location where it can not emitradiation to the exposure area; and

a projection system configured to project the modulated beams onto thesubstrate.

74. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move the plurality of radiation sources with respect tothe exposure area during exposure of the exposure area, the modulatorhaving an output of the plurality of beams to the exposure area, theoutput having an area less than the area of the output of the pluralityof radiation sources; and

a projection system configured to project the modulated beams onto thesubstrate.

75. A lithographic apparatus comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of arrays of individuallycontrollable radiation sources, configured to provide a plurality ofbeams modulated according to a desired pattern to a respective exposurearea of the substrate, and configured to move each array with respect toits respective exposure area, or move the plurality of beams from eacharray with respect to its respective exposure area, or move both thearray and the plurality of beams with respect to the respective exposurearea, wherein, in use, a respective exposure area of an array of theplurality of arrays abuts or overlaps a respective exposure area ofanother array of the plurality of arrays; and

a projection system configured to project the modulated beams onto thesubstrate.

76. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, or move the plurality of beams withrespect to the exposure area, or move both each of the plurality ofradiation sources and the plurality of beams with respect to theexposure area, wherein, during use, each of the radiation sources areoperated in the steep part of its respective power/forward currentcurve; and

a projection system configured to project the modulated beams onto thesubstrate.

77. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, or move the plurality of beams withrespect to the exposure area, or move both each of the plurality ofradiation sources and the plurality of beams with respect to theexposure area, wherein each of the individually controllable radiationsources comprises a blue-violet laser diode; and

a projection system configured to project the modulated beams onto thesubstrate.

78. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged in at least two concentric circular arrays; and

a projection system configured to project the modulated beams onto thesubstrate.

79. The lithographic apparatus according to embodiment 78, wherein atleast one circular array of the circular arrays is arranged in astaggered manner to at least one other circular array of the circulararrays.

80. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged around a center of a structure and the structure having inwardof the plurality of radiation source an opening extending through thestructure; and

a projection system configured to project the modulated beams onto thesubstrate.

81. The lithographic apparatus according to embodiment 80, furthercomprising a support to hold support structure at or outside of theradiation sources.

82. The lithographic apparatus according to embodiment 81, wherein thesupport comprises a bearing to permit movement of the structure.

83. The lithographic apparatus according to embodiment 81 or embodiment82, wherein the support comprises a motor to move the structure.

84. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged around a center of a structure;

a support to support the structure at or outside of the radiationsources, the support configured to rotate or allow rotation of thestructure; and

a projection system configured to project the modulated beams onto thesubstrate.

85. The lithographic apparatus according to embodiment 84, wherein thesupport comprises a bearing to permit rotation of the structure.

86. The lithographic apparatus according to embodiment 84 or embodiment85, wherein the support comprises a motor to rotate the structure.

87. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged on a movable structure, which is in turn arranged on a movableplate; and

a projection system configured to project the modulated beams onto thesubstrate.

88. The lithographic apparatus according to embodiment 87, wherein themovable structure is rotatable.

89. The lithographic apparatus according to embodiment 87 or embodiment88, wherein the movable plate is rotatable.

90. The lithographic apparatus according to embodiment 89, wherein thecenter of rotation of the movable plate is not coincident with thecenter of rotation of the movable structure.

91. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged in or on a movable structure;

a fluid channel arranged in the movable structure to provide atemperature controlling fluid to at least adjacent the plurality ofradiation sources; and

a projection system configured to project the modulated beams onto thesubstrate.

92. The lithographic apparatus according to embodiment 91, furthercomprising a sensor located in or on the movable structure.

93. The lithographic apparatus according to embodiment 91 or embodiment92, further comprising a sensor located at a position adjacent to atleast one radiation source of the plurality of radiation sources but notin or on the movable structure.

94. The lithographic apparatus according to embodiment 92 or embodiment93, wherein the sensor comprises a temperature sensor.

95. The lithographic apparatus according to any one of embodiments92-94, wherein the sensor comprises a sensor configured to measure anexpansion and/or contraction of the structure.

96. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged in or on a movable structure;

a fin arranged in or on the movable structure to provide temperaturecontrol of the structure; and

a projection system configured to project the modulated beams onto thesubstrate.

97. The lithographic apparatus according to embodiment 96, furthercomprising a stationary fin to cooperate with the fin in or on themovable structure.

98. The lithographic apparatus according to embodiment 97, comprising atleast two fins in or on the movable structure and the stationary fin islocated between at least one fin of the fins in or on the movablestructure and at least one other fin of the fins in or on the movablestructure.99. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged in or on a movable structure;

a fluid supply device configured to supply a fluid to an outside surfaceof the structure to control a temperature of the structure; and

a projection system configured to project the modulated beams onto thesubstrate.

100. The lithographic apparatus according to embodiment 99, wherein thefluid supply device is configured to supply gas.

101. The lithographic apparatus according to embodiment 99, wherein thefluid supply device is configured to supply a liquid.

102. The lithographic apparatus according to embodiment 101, furthercomprising a fluid confinement structure configured to maintain theliquid in contact with the structure.

103. The lithographic apparatus according to embodiment 102, wherein thefluid confinement structure is configured to maintain a seal between thestructure and the fluid confinement structure.

104. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area;

a structurally separated lens attached near or to each radiation sourceof the plurality of radiation sources and movable with respectiveradiation source.

105. The lithographic apparatus according to embodiment 104, furthercomprising an actuator configured to displace a lens relative itsrespective radiation source.

106. The lithographic apparatus according to embodiment 104 orembodiment 105, further comprising an actuator configured to displace alens and its respective radiation source relative a structure supportingthe lens and its respective radiation source.

107. The lithographic apparatus according to embodiment 105 orembodiment 106, wherein the actuator is configured to move the lens inup to 3 degrees of freedom.

108. The lithographic apparatus according to any one of embodiments104-107, further comprising an aperture structure downstream from atleast one radiation source of the plurality of radiation sources.

109. The lithographic apparatus according to any one of embodiments104-107, wherein the lens is attached to a structure supporting the lensand its respective radiation source with a high thermal conductivitymaterial.

110. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area;

a spatial coherence disrupting device configured to scramble radiationfrom at least one radiation source of the plurality of radiationsources; and

a projection system configured to project the modulated beams onto thesubstrate.

111. The lithographic apparatus according to embodiment 110, wherein thespatial coherence disrupting device comprises a stationary plate and theat least radiation source is movable with respect to the plate.

112. The lithographic apparatus according to embodiment 110, wherein thespatial coherence disrupting device comprises at least one selected fromthe following: a phase modulator, a rotating plate or a vibrating plate.

113. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area;

a sensor configured to measure focus associated with at least oneradiation source of the plurality of radiation sources, at least part ofthe sensor in or on the at least one radiation source; and

a projection system configured to project the modulated beams onto thesubstrate.

114. The lithographic apparatus according to embodiment 113, wherein thesensor is configured to measure focus associated with each of theradiation sources individually.

115. The lithographic apparatus according to embodiment 113 orembodiment 114, wherein the sensor is knife edge focus detector.

116. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area;

a transmitter configured to wirelessly transmit a signal and/or power tothe plurality of radiation sources to respectively control and/or powerthe plurality of radiation sources; and

a projection system configured to project the modulated beams onto thesubstrate.

117. The lithographic apparatus according to embodiment 116, wherein thesignal comprises a plurality of signals and further comprising ademultiplexer to send each of the plurality of signals toward arespective radiation source.

118. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged in or on a movable structure;

a single line, connecting a controller to the movable structure, totransmit a plurality of signals and/or power to the plurality ofradiation sources to respective control and/or power the plurality ofradiation sources; and

a projection system configured to project the modulated beams onto thesubstrate.

119. The lithographic apparatus according to embodiment 118, wherein thesignal comprises a plurality of signals and further comprising ademultiplexer to send each of the plurality of signals toward arespective radiation source.

120. The lithographic apparatus according to embodiment 118 orembodiment 119, wherein the line comprises an optical line.

121. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area;

a sensor to measure a characteristic of radiation that is or to betransmitted toward the substrate by at least one radiation source of theplurality of radiation sources; and

a projection system configured to project the modulated beams onto thesubstrate.

122. The lithographic apparatus according to embodiment 121, wherein atleast part of the sensor is located in or on the substrate holder.

123. The lithographic apparatus according to embodiment 122, wherein theat least part of the sensor is located in or on the substrate holder ata position outside of an area on which the substrate is supported on thesubstrate holder.

124. The lithographic apparatus according to any one of embodiments121-123, wherein at least part of the sensor is located at a side of thesubstrate that, in use, substantially extends in a scanning direction ofthe substrate.

125. The lithographic apparatus according to any one of embodiments121-124, wherein at least part of the sensor is mounted in or on a frameto support the movable structure.

126. The lithographic apparatus according to any one of embodiments121-125, wherein the sensor is configured to measure radiation from theat least one radiation source outside of the exposure area.

127. The lithographic apparatus according to any one of embodiments121-126, wherein at least part of the sensor is movable.

128. The lithographic apparatus according to any one of embodiments121-127, further comprising a controller configured to calibrate the atleast one radiation source based on the sensor results.

129. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, the plurality of radiation sourcesarranged in or on a movable structure;

a sensor to measure a position of the movable structure; and

a projection system configured to project the modulated beams onto thesubstrate.

130. The lithographic apparatus according to embodiment 129, wherein atleast part of the sensor is mounted in or on a frame that supports themovable structure.

131. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area, each of the plurality of radiation sourceshaving or providing an identification;

a sensor configured to detect the identification; and

a projection system configured to project the modulated beams onto thesubstrate.

132. The lithographic apparatus according to embodiment 131, wherein atleast part of the sensor is mounted in or on a frame that supports theplurality of radiation sources.

133. The lithographic apparatus according to embodiment 131 orembodiment 132, wherein the identification comprises a frequency ofradiation from a respective radiation source.

134. The lithographic apparatus according to any one of embodiments131-133, wherein the identification comprises at least one selected fromthe following: a bar code, a radio frequency identification, or a mark.

135. A lithographic apparatus, comprising:

a substrate holder constructed to hold a substrate;

a modulator, comprising a plurality of individually controllableradiation sources, configured to provide a plurality of beams modulatedaccording to a desired pattern to an exposure area of the substrate, andconfigured to move each of the plurality of radiation sources withrespect to the exposure area;

a sensor configured to detect radiation from at least one radiationsource of the plurality of radiation sources, redirected by thesubstrate; and

a projection system configured to project the modulated beams onto thesubstrate.

136. The lithographic apparatus according to embodiment 135, wherein thesensor is configured to determine a location of a spot of the radiationfrom the at least one radiation source incident on the substrate fromthe redirected radiation.

137. The lithographic apparatus according to any one of embodiments70-136, wherein the modulator is configured to rotate at least oneradiation source around an axis substantially parallel to a direction ofpropagation of the plurality of beams.

138. The lithographic apparatus according to any one of embodiments70-137, wherein the modulator is configured to translate at least oneradiation source in a direction transverse to a direction of propagationof the plurality of beams.

139. The lithographic apparatus according to any one of embodiments70-138, wherein the modulator comprises a beam deflector configured tomove the plurality of beams.

140. The lithographic apparatus according to embodiment 139, wherein thebeam deflector is selected from the group consisting of: mirror, prism,or acoustic-optical modulator.

141. The lithographic apparatus according to embodiment 139, wherein thebeam deflector comprises a polygon.

142. The lithographic apparatus according to embodiment 139, wherein thebeam deflector is configured to vibrate.

143. The lithographic apparatus according to embodiment 139, wherein thebeam deflector is configured to rotate.

144. The lithographic apparatus according to any one of embodiments70-143, wherein the substrate holder is configured to move the substratein a direction along which the plurality of beams are provided.

145. The lithographic apparatus according to embodiment 144, wherein themovement of the substrate is a rotation.

146. The lithographic apparatus according any one of embodiments 70-145,wherein the plurality of radiation sources are movable together.

147. The lithographic apparatus according to any one of embodiments70-146, wherein the plurality of radiation sources are arranged in acircular manner.

148. The lithographic apparatus according to any one of embodiments70-147, wherein the plurality of radiation sources are arranged in aplate and spaced apart from each other.

149. The lithographic apparatus according to any one of embodiments70-148, wherein the projection system comprises a lens array.

150. The lithographic apparatus according to any one of embodiments70-149, wherein the projection system consists essentially of a lensarray.

151. The lithographic apparatus according to embodiment 149 orembodiment 150, wherein a lens of the lens array has a high numericalaperture and the lithographic apparatus is configured to have thesubstrate out of the focus of the radiation associated with the lens toeffectively lower the numerical aperture of the lens.152. The lithographic apparatus according to any one of embodiments70-151, wherein each of the radiation sources comprises a laser diode.153. The lithographic apparatus according to embodiment 152, whereineach laser diode is configured to emit radiation having a wavelength ofabout 405 nm154. The lithographic apparatus according to any one of embodiments70-153, further comprising a temperature controller configured tomaintain the plurality of radiation sources at a substantially constanttemperature during exposure.155. The lithographic apparatus according to embodiment 154, wherein thecontroller is configured to heat the plurality of radiation sources to atemperature at or near the substantially constant temperature prior toexposure.156. The lithographic apparatus according to any one of embodiments70-155, comprising at least 3 separate arrays arranged along adirection, each of the arrays comprising a plurality of radiationsources.157. The lithographic apparatus according to any one of embodiments70-156, wherein the plurality of radiation sources comprises at leastabout 1200 radiation sources.158. The lithographic apparatus according to any one of embodiments70-157, further comprising an alignment sensor to determine alignmentbetween at least one radiation source of the plurality of radiationsources and the substrate.159. The lithographic apparatus according to any one of embodiments70-158, further comprising a level sensor to determine a position of thesubstrate relative to a focus of at least one beam of the plurality ofbeams.160. The lithographic apparatus according to embodiment 158 orembodiment 159, further comprising a controller configured to alter thepattern based on alignment sensor results and/or level sensor results.161. The lithographic apparatus according any one of embodiments 70-160,further comprising a controller configured to alter the pattern based ona measurement of a temperature of or associated with at least oneradiation source of the plurality of radiation sources.162. The lithographic apparatus according any one of embodiments 70-161,further comprising a sensor to measure a characteristic of radiationthat is or to be transmitted toward the substrate by at least oneradiation source of the plurality of radiation sources.163. A lithographic apparatus comprising:

a plurality of individually controllable radiation sources configured toprovide a plurality of beams modulated according to a desired pattern;

a lens array comprising a plurality of lenslets; and

a substrate holder constructed to hold a substrate,

wherein, during use, there are no other optics besides the lens arraybetween the plurality of radiation sources and the substrate.

164. A programmable patterning device, comprising:

a substrate having thereon an array of radiation emitting diodes spacedapart in at least one direction; and

a lens array on a radiation downstream side of the radiation emittingdiodes.

165. The programmable patterning device according to embodiment 164,wherein the lens array comprises a microlens array having a plurality ofmicrolenses, a number of the microlenses corresponding to a number ofradiation emitting diodes and positioned to focus radiation selectivelypassed by respective ones of the radiation emitting diodes into an arrayof microspots.166. The programmable patterning device according to embodiment 164 orembodiment 165, wherein the radiation emitting diodes are spaced apartin at least two orthogonal directions.167. The programmable patterning device according to any one ofembodiments 164-166, wherein the radiation emitting diodes are embeddedin a material of low thermal conductivity.168. A device manufacturing method comprising:

providing a plurality of beams modulated according to a desired patterntoward an exposure area of a substrate using a plurality of individuallycontrollable radiation sources;

moving at least one of the plurality of radiation sources whileproviding the plurality of beams such that only less than all of theplurality of radiation sources can expose the exposure area at any onetime; and

projecting the plurality of beams onto the substrate.

169. A device manufacturing method comprising:

providing a plurality of beams modulated according to a desired patternusing a plurality of individually controllable radiation sources;

moving at least one of the plurality of radiation sources between alocation where it emits radiation and a location where it does not; and

projecting the plurality of beams onto a substrate.

170. A device manufacturing method comprising providing a beam modulatedaccording to a desired pattern using a plurality of individuallycontrollable radiation sources and projecting the modulated beam fromthe plurality of individually controllable radiation sources to asubstrate using only a lens array.171. A device manufacturing method comprising:

providing a plurality of beams of electromagnetic radiation modulatedaccording to a desired pattern using a plurality of individuallycontrollable radiation sources;

moving at least one radiation source of the plurality of radiationsources with respect to an exposure area during exposure of the exposurearea such that radiation from the at least one radiation source at thesame time abuts or overlaps radiation from at least one other radiationsource of the plurality of radiation sources; and

projecting the plurality of beams onto a substrate.

172. The method according to any one of embodiments 168-171, wherein themoving comprises rotating at least one radiation source around an axissubstantially parallel to a direction of propagation of the plurality ofbeams.

173. The method according to any one of embodiments 168-172, wherein themoving comprises translating at least one radiation source in adirection transverse to a direction of propagation of the plurality ofbeams.

174. The method according to any one of embodiments 168-173, comprisingmoving the plurality of beams by using a beam deflector.

175. The method according to embodiment 174, wherein the beam deflectoris selected from the group consisting of: mirror, prism, oracoustic-optical modulator.

176. The method according to embodiment 174, wherein the beam deflectorcomprises a polygon.

177. The method according to embodiment 174, wherein the beam deflectoris configured to vibrate.

178. The method according to embodiment 174, wherein the beam deflectoris configured to rotate.

179. The method according to any one of embodiments 168-178, comprisingmoving the substrate in a direction along which the plurality of beamsare provided.

180. The method according to embodiment 179, wherein the movement of thesubstrate is a rotation.

181. The method according any one of embodiments 168-180, comprisingmoving the plurality of radiation sources together.

182. The method according to any one of embodiments 168-181, wherein theplurality of radiation sources are arranged in a circular manner.

183. The method according to any one of embodiments 168-182, wherein theplurality of radiation sources are arranged in a plate and spaced apartfrom each other.

184. The method according to any one of embodiments 168-183, wherein theprojecting comprises forming an image of each of the beams onto thesubstrate using a lens array.

185. The method according to any one of embodiments 168-184, wherein theprojecting comprises forming an image of each of the beams onto thesubstrate using essentially only a lens array.

186. The method according to any one of embodiments 168-185, whereineach of the radiation sources comprises a laser diode.

187. The method according to embodiment 186, wherein each laser diode isconfigured to emit radiation having a wavelength of about 405 nm.

188. A flat panel display manufactured according to the method of anyone of embodiments 168-187.

189. An integrated circuit device manufactured according to the methodof any one of embodiments 168-187.

190. A radiation system, comprising:

a plurality of movable radiation arrays, each radiation array comprisinga plurality of individually controllable radiation sources configured toprovide a plurality of beams modulated according to a desired pattern;and

a motor configured to move each of the radiation arrays.

191. The radiation system according to embodiment 190, wherein the motoris configured to rotate each of the radiation arrays around an axissubstantially parallel to a direction of propagation of the plurality ofbeams.

192. The radiation system according to embodiment 190 or embodiment 191,wherein the motor is configured to translate each of the radiationarrays in a direction transverse to a direction of propagation of theplurality of beams.

193. The radiation system according to any one of embodiments 190-192,further comprising a beam deflector configured to move the plurality ofbeams.

194. The radiation system according to embodiment 193, wherein the beamdeflector is selected from the group consisting of: mirror, prism, oracoustic-optical modulator.

195. The radiation system according to embodiment 193, wherein the beamdeflector comprises a polygon.

196. The radiation system according to embodiment 193, wherein the beamdeflector is configured to vibrate.

197. The radiation system according to embodiment 193, wherein the beamdeflector is configured to rotate.

198. The radiation system according to any one of embodiments 190-197,wherein the plurality of radiation sources of each of the radiationarrays are movable together.

199. The radiation system according to any one of embodiments 190-198,wherein the plurality of radiation sources of each of the radiationarrays are arranged in a circular manner.

200. The radiation system according to any one of embodiments 190-199,wherein the plurality of radiation sources of each of the radiationarrays are arranged in a plate and spaced apart from each other.

201. The radiation system according to any one of embodiments 190-200,further comprising a lens array associated with each of the radiationarrays.

202. The radiation system according to embodiment 201, wherein each ofthe plurality of radiation sources of each of the radiation arrays isassociated with a lens of a lens array associated with the radiationarray.

203. The radiation system according to any one of embodiments 190-202,wherein each of the plurality of sources of each of the radiation arrayscomprises a laser diode.

204. The radiation system according to embodiment 203, wherein eachlaser diode is configured to emit radiation having a wavelength of about405 nm

205. A lithographic apparatus for exposing a substrate to radiation, theapparatus comprising a programmable patterning device having 100-25000self-emissive individually addressable elements.

206. The lithographic apparatus according to embodiment 205, comprisingat least 400 self-emissive individually addressable elements.

207. The lithographic apparatus according to embodiment 205, comprisingat least 1000 self-emissive individually addressable elements.

208. The lithographic apparatus according to any one of embodiments205-207, comprising less than 10000 self-emissive individuallyaddressable elements.

209. The lithographic apparatus according to any one of embodiments205-207, comprising less than 5000 self-emissive individuallyaddressable elements.

210. The lithographic apparatus according to any one of embodiments205-209, wherein the self-emissive individually addressable elements arelaser diodes.

211. The lithographic apparatus according to any one of embodiments205-209, wherein the self-emissive individually addressable elements arearranged to have a spot size on the substrate selected from the range of0.1-3 microns.

212. The lithographic apparatus according to any one of embodiments205-209, wherein the self-emissive individually addressable elements arearranged to have a spot size on the substrate of about 1 micron.

213. A lithographic apparatus for exposing a substrate to radiation, theapparatus comprising a programmable patterning device having, normalizedto an exposure field length of 10 cm, 100-25000 self-emissiveindividually addressable elements.

214. The lithographic apparatus according to embodiment 213, comprisingat least 400 self-emissive individually addressable elements.

215. The lithographic apparatus according to embodiment 213, comprisingat least 1000 self-emissive individually addressable elements.

216. The lithographic apparatus according to any one of embodiments213-215, comprising less than 10000 self-emissive individuallyaddressable elements.

217. The lithographic apparatus according to any one of embodiments213-215, comprising less than 5000 self-emissive individuallyaddressable elements.

218. The lithographic apparatus according to any one of embodiments213-217, wherein the self-emissive individually addressable elements arelaser diodes.

219. The lithographic apparatus according to any one of embodiments213-217, wherein the self-emissive individually addressable elements arearranged to have a spot size on the substrate selected from the range of0.1-3 microns.

220. The lithographic apparatus according to any one of embodiments213-217, wherein the self-emissive individually addressable elements arearranged to have a spot size on the substrate of about 1 micron.

221. A programmable patterning device comprising a rotatable disk, thedisk having 100-25000 self-emissive individually addressable elements.

222. The programmable patterning device according to embodiment 221,wherein the disk comprises at least 400 self-emissive individuallyaddressable elements.

223. The programmable patterning device according to embodiment 221,wherein the disk comprises at least 1000 self-emissive individuallyaddressable elements.

224. The programmable patterning device according to any one ofembodiments 221-223, wherein the disk comprises less than 10000self-emissive individually addressable elements.

225. The programmable patterning device according to any one ofembodiments 221-223, wherein the disk comprises less than 5000self-emissive individually addressable elements.

226. The programmable patterning device according to any one ofembodiments 221-225, wherein the self-emissive individually addressableelements are laser diodes.

227. Use of one or more of the present inventions in the manufacture offlat panel displays.

228. Use of one or more of the present inventions in integrated circuitpackaging.

229. A lithographic method comprising exposing a substrate to radiationusing a programmable patterning device having self-emissive elements,wherein the power consumption of the programmable patterning device,during the exposing, to operate said self-emissive elements is less than10 kW.230. The method according to embodiment 229, wherein the powerconsumption is less than 5 kW.231. The method according to embodiment 229 or embodiment 230, whereinthe power consumption is at least 100 mW.232. The method according to any one of embodiments 229-231, wherein theself-emissive elements are laser diodes.233. The method according to embodiment 232, wherein the laser diodesare blue-violet laser diodes.234. A lithographic method comprising exposing a substrate to radiationusing a programmable patterning device having self-emissive elements,wherein the optical output per emissive element, when in use, is atleast 1 mW.235. The method according to embodiment 234, wherein the optical outputis at least 10 mW.236. The method according to embodiment 234, wherein the optical outputis at least 50 mW.237. The method according to any one of embodiments 234-236, wherein theoptical output is less than 200 mW.238. The method according to any one of embodiments 234-237, wherein theself-emissive elements are laser diodes.239. The method of embodiment 238, wherein the laser diodes areblue-violet laser diodes.240. The method of embodiment 234, wherein the optical output is greaterthan 5 mW but less than or equal to 20 mW.241. The method of embodiment 234, wherein the optical output is greaterthan 5 mW but less than or equal to 30 mW.242. The method of embodiment 234, wherein the optical output is greaterthan 5 mW but less than or equal to 40 mW.243. The method of any one of embodiments 234-242, wherein theself-emissive elements are operated in single mode.244. A lithographic apparatus comprising:

a programmable patterning device having self-emissive elements; and

a rotatable frame having optical elements for receiving radiation fromthe self-emissive elements, the optical elements being refractiveoptical elements.

245. A lithographic apparatus comprising:

a programmable patterning device having self-emissive elements; and

a rotatable frame having optical elements for receiving radiation fromthe self-emissive elements, the rotatable frame having no reflectiveoptical element to receive radiation from any or all of theself-emissive elements.

246. A lithographic apparatus comprising:

a programmable patterning device; and

a rotatable frame, the rotatable frame comprising a plate with opticalelements, a surface of the plate with optical elements being flat.

247. Use of one or more of the inventions in the manufacture of flatpanel displays.

248. Use of one or more of the inventions in integrated circuitpackaging.

249. A flat panel display manufactured according to any of the methods.

250. An integrated circuit device manufactured according to any of themethods.

251. A lithographic apparatus comprising:

an optical column capable of projecting a beam on a target portion of asubstrate, the optical column comprising a projection system configuredto project the beam onto the target portion;

a scanning movement actuator to move the substrate with a scanning speedin a scanning direction with respect to the optical column; and

a rotating movement actuator to rotate the optical column or a partthereof with a rotating frequency resulting in a tangential rotationspeed of the beam on the target portion,

wherein the target portion has a height in the scanning direction and atangential width mainly perpendicular to the scanning direction, whereinthe scanning speed divided by the height substantially corresponds withthe rotation speed of the beam divided by the tangential width.

252. The apparatus of embodiment 251, wherein the rotating frequency ofthe rotatable column or part thereof is selected from the range of 2500to 10000 rpm, from the range of 4000 to 6000 rpm, or from the range of4500 to 5000 rpm.

253. The apparatus of embodiment 251 or embodiment 252, wherein theoptical column comprises a self-emissive contrast device configured toemit the beam.

254. The apparatus of embodiment 253, wherein the self-emissive contrastdevice is mounted on a stationary part of the optical column.

255. The apparatus of embodiment 253 or embodiment 254, wherein theoptical column comprises multiple self-emissive contrast devicesarranged with a radial pitch.

256. The apparatus of embodiment 255, wherein the number ofself-emissive contrast devices per optical column is selected from therange of 2 to 40, from the range of 5 to 20, or from the range of 8 to15.

257. The apparatus of any of embodiments 254 to 256, wherein the radialpitch, at the projection image plane on the substrate, is selected fromthe range of 50% to 95%, from the range of 70% to 90%, or from the rangeof 75% to 85% of a projection resolution of the apparatus.258. The apparatus of embodiment 257, wherein the projection resolutionis smaller than or equal to 10 μm, or smaller than or equal to 5 μm, orsmaller than or equal to 2 μm.259. The apparatus of any of embodiments 251 to 258, wherein the radiusof a central axis of the optical column comprising lenses is selectedfrom the range of 50 to 500 mm, from the range of 100 to 350 mm, or fromthe range of 200 and 250 mm.260. The apparatus of any of embodiments 251 to 259, wherein therotation speed of the beam on the target portion is selected from therange of 25 to 400 m/s, from the range of 50 to 200 m/s, or from therange of 80 to 140 m/s.261. The apparatus of any of embodiments 251 to 260, wherein thetangential width of the target portion is selected from the range of 5to 40 mm, from the range of 8 to 20 mm, or from the range of 10 to 15mm.262. The apparatus of any of embodiments 251 to 261, comprising multipleoptical columns, each optical column having one or more self-emissivecontrast devices configured to project a beam on a respective targetportion, the respective target portions of the multiple optical columnsbeing spaced in a direction perpendicular to the scanning direction.263. The apparatus of embodiment 262, wherein the respective targetportions cover the dimension of the substrate in the directionperpendicular to the scanning direction.264. The apparatus of any of embodiments 251 to 261, comprising multiplerotatable optical columns or parts thereof.265. The apparatus of any of embodiments 251 to 264, wherein the targetportions in the scanning direction and/or in the direction perpendicularto the scanning direction partially overlap.266. Method of decreasing an exposure time divided by a substrate lengthin the lithographic apparatus of embodiment 251, comprising one or moreselected from the following:

increasing the number of self-emissive contrast devices per opticalcolumn,

increasing the radius of a central axis of the optical column on therotatable part,

increasing the rotating frequency of the rotatable part,

decreasing the width of a target portion,

minimizing the distance between a plurality of optical columns in thescanning direction, and

decreasing the width of a target portion in the tangential direction.

Although specific reference may be made in this text to the use of alithographic apparatus in the manufacture of a specific device orstructure (e.g. an integrated circuit or a flat panel display), itshould be understood that the lithographic apparatus and lithographicmethod described herein may have other applications. Applicationsinclude, but are not limited to, the manufacture of integrated circuits,integrated optical systems, guidance and detection patterns for magneticdomain memories, flat panel displays, LCDs, OLED displays, thin filmmagnetic heads, micro-electromechanical devices (MEMS),micro-opto-electromechanical systems (MOEMS), DNA chips, packaging(e.g., flip chip, redistribution, etc.), flexible displays orelectronics (which are displays or electronics that may be rollable,bendable like paper and remain free of deformities, conformable, rugged,thin, and/or lightweight, e.g., flexible plastic displays), etc. Also,for instance in a flat panel display, the present apparatus and methodmay be used to assist in the creation of a variety of layers, e.g. athin film transistor layer and/or a color filter layer. The skilledartisan will appreciate that, in the context of such alternativeapplications, any use of the terms “wafer” or “die” herein may beconsidered as synonymous with the more general terms “substrate” or“target portion,” respectively. The substrate referred to herein may beprocessed, before or after exposure, in for example a track (e.g., atool that typically applies a layer of resist to a substrate anddevelops the exposed resist), a metrology tool and/or an inspectiontool. Where applicable, the disclosure herein may be applied to such andother substrate processing tools. Further, the substrate may beprocessed more than once, for example in order to create a multi-layerIC, so that the term substrate used herein may also refer to a substratethat already contains multiple processed layers.

The terms “radiation” and “beam” used herein encompass all types ofelectromagnetic radiation, including ultraviolet (UV) radiation (e.g.having a wavelength of or about 365, 248, 193, 157 or 126 nm) andextreme ultra-violet (EUV) radiation (e.g. having a wavelength in therange of 5-20 nm), as well as particle beams, such as ion beams orelectron beams.

A flat panel display substrate may be rectangular in shape. Alithographic apparatus designed to expose a substrate of this type mayprovide an exposure region which covers a full width of the rectangularsubstrate, or which covers a portion of the width (for example half ofthe width). The substrate may be scanned underneath the exposure region,while the patterning device is synchronously scanned through thepatterned beam or the patterning device provides a varying pattern. Inthis way, all or part of the desired pattern is transferred to thesubstrate. If the exposure region covers the full width of the substratethen exposure may be completed with a single scan. If the exposureregion covers, for example, half of the width of the substrate, then thesubstrate may be moved transversely after the first scan, and a furtherscan is typically performed to expose the remainder of the substrate.

The term “patterning device”, used herein should be broadly interpretedas referring to any device that can be used to modulate thecross-section of a radiation beam such as to create a pattern in (partof) the substrate. It should be noted that the pattern imparted to theradiation beam may not exactly correspond to the desired pattern in thetarget portion of the substrate, for example if the pattern includesphase-shifting features or so called assist features. Similarly, thepattern eventually generated on the substrate may not correspond to thepattern formed at any one instant on the array of individuallycontrollable elements. This may be the case in an arrangement in whichthe eventual pattern formed on each part of the substrate is built upover a given period of time or a given number of exposures during whichthe pattern on the array of individually controllable elements and/orthe relative position of the substrate changes. Generally, the patterncreated on the target portion of the substrate will correspond to aparticular functional layer in a device being created in the targetportion, e.g., an integrated circuit or a flat panel display (e.g., acolor filter layer in a flat panel display or a thin film transistorlayer in a flat panel display). Examples of such patterning devicesinclude, e.g., reticles, programmable mirror arrays, laser diode arrays,light emitting diode arrays, grating light valves, and LCD arrays.Patterning devices whose pattern is programmable with the aid of anelectronic devices (e.g., a computer), e.g., patterning devicescomprising a plurality of programmable elements that can each modulatethe intensity of a portion of the radiation beam, (e.g., all the devicesmentioned in the previous sentence except for the reticle), includingelectronically programmable patterning devices having a plurality ofprogrammable elements that impart a pattern to the radiation beam bymodulating the phase of a portion of the radiation beam relative toadjacent portions of the radiation beam, are collectively referred toherein as “contrast devices”. In an embodiment, the patterning devicecomprises at least 10 programmable elements, e.g. at least 100, at least1000, at least 10000, at least 100000, at least 1000000, or at least10000000 programmable elements. Embodiments of several of these devicesare discussed in some more detail below:

-   -   A programmable mirror array. The programmable mirror array may        comprise a matrix-addressable surface having a viscoelastic        control layer and a reflective surface. The basic principle        behind such an apparatus is that, for example, addressed areas        of the reflective surface reflect incident radiation as        diffracted radiation, whereas unaddressed areas reflect incident        radiation as undiffracted radiation. Using an appropriate        spatial filter, the undiffracted radiation can be filtered out        of the reflected beam, leaving only the diffracted radiation to        reach the substrate. In this manner, the beam becomes patterned        according to the addressing pattern of the matrix-addressable        surface. It will be appreciated that, as an alternative, the        filter may filter out the diffracted radiation, leaving the        undiffracted radiation to reach the substrate. An array of        diffractive optical MEMS devices may also be used in a        corresponding manner. A diffractive optical MEMS device may        comprise a plurality of reflective ribbons that may be deformed        relative to one another to form a grating that reflects incident        radiation as diffracted radiation. A further embodiment of a        programmable mirror array employs a matrix arrangement of tiny        mirrors, each of which may be individually tilted about an axis        by applying a suitable localized electric field, or by employing        piezoelectric actuation means. The degree of tilt defines the        state of each mirror. The mirrors are controllable, when the        element is not defective, by appropriate control signals from        the controller. Each non-defective element is controllable to        adopt any one of a series of states, so as to adjust the        intensity of its corresponding pixel in the projected radiation        pattern. Once again, the mirrors are matrix-addressable, such        that addressed mirrors reflect an incoming radiation beam in a        different direction to unaddressed mirrors; in this manner, the        reflected beam may be patterned according to the addressing        pattern of the matrix-addressable mirrors. The required matrix        addressing may be performed using suitable electronic means.        More information on mirror arrays as here referred to can be        gleaned, for example, from U.S. Pat. No. 5,296,891 and U.S. Pat.        No. 5,523,193, and PCT Patent Application Publication Nos. WO        98/38597 and WO 98/33096, which are incorporated herein by        reference in their entirety.    -   A programmable LCD array. An example of such a construction is        given in U.S. Pat. No. 5,229,872, which is incorporated herein        by reference in its entirety.

The lithographic apparatus may comprise one or more patterning devices,e.g. one or more contrast devices. For example, it may have a pluralityof arrays of individually controllable elements, each controlledindependently of each other. In such an arrangement, some or all of thearrays of individually controllable elements may have at least one of acommon illumination system (or part of an illumination system), a commonsupport structure for the arrays of individually controllable elementsand/or a common projection system (or part of the projection system).

It should be appreciated that where pre-biasing of features, opticalproximity correction features, phase variation techniques and/ormultiple exposure techniques are used, for example, the pattern“displayed” on the array of individually controllable elements maydiffer substantially from the pattern eventually transferred to a layerof or on the substrate. Similarly, the pattern eventually generated onthe substrate may not correspond to the pattern formed at any oneinstant on the array of individually controllable elements. This may bethe case in an arrangement in which the eventual pattern formed on eachpart of the substrate is built up over a given period of time or a givennumber of exposures during which the pattern on the array ofindividually controllable elements and/or the relative position of thesubstrate changes.

The projection system and/or illumination system may include varioustypes of optical components, e.g., refractive, reflective, magnetic,electromagnetic, electrostatic or other types of optical components, orany combination thereof, to direct, shape, or control the beam ofradiation.

The lithographic apparatus may be of a type having two (e.g., dualstage) or more substrate tables (and/or two or more patterning devicetables). In such “multiple stage” machines the additional table(s) maybe used in parallel, or preparatory steps may be carried out on one ormore tables while one or more other tables are being used for exposure.

The lithographic apparatus may also be of a type wherein at least aportion of the substrate may be covered by an “immersion liquid” havinga relatively high refractive index, e.g. water, so as to fill a spacebetween the projection system and the substrate. An immersion liquid mayalso be applied to other spaces in the lithographic apparatus, forexample, between the patterning device and the projection system.Immersion techniques are used to increase the NA of projection system.The term “immersion” as used herein does not mean that a structure,e.g., a substrate, must be submerged in liquid, but rather only meansthat liquid is located between the projection system and the substrateduring exposure.

Further, the apparatus may be provided with a fluid processing cell toallow interactions between a fluid and irradiated parts of the substrate(e.g., to selectively attach chemicals to the substrate or toselectively modify the surface structure of the substrate).

In an embodiment, the substrate has a substantially circular shape,optionally with a notch and/or a flattened edge along part of itsperimeter. In an embodiment, the substrate has a polygonal shape, e.g. arectangular shape. Embodiments where the substrate has a substantiallycircular shape include embodiments where the substrate has a diameter ofat least 25 mm, for instance at least 50 mm, at least 75 mm, at least100 mm, at least 125 mm, at least 150 mm, at least 175 mm, at least 200mm, at least 250 mm, or at least 300 mm. In an embodiment, the substratehas a diameter of at most 500 mm, at most 400 mm, at most 350 mm, atmost 300 mm, at most 250 mm, at most 200 mm, at most 150 mm, at most 100mm, or at most 75 mm. Embodiments where the substrate is polygonal, e.g.rectangular, include embodiments where at least one side, e.g. at least2 sides or at least 3 sides, of the substrate has a length of at least 5cm, e.g. at least 25 cm, at least 50 cm, at least 100 cm, at least 150cm, at least 200 cm, or at least 250 cm. In an embodiment, at least oneside of the substrate has a length of at most 1000 cm, e.g. at most 750cm, at most 500 cm, at most 350 cm, at most 250 cm, at most 150 cm, orat most 75 cm. In an embodiment, the substrate is a rectangularsubstrate having a length of about 250-350 cm and a width of about250-300 cm The thickness of the substrate may vary and, to an extent,may depend, e.g., on the substrate material and/or the substratedimensions. In an embodiment, the thickness is at least 50 μm, forinstance at least 100 μm, at least 200 μm, at least 300 μm, at least 400μm, at least 500 μm, or at least 600 μm. In one embodiment, thethickness of the substrate is at most 5000 μm, for instance at most 3500μm, at most 2500 μm, at most 1750 μm, at most 1250 μm, at most 1000 μm,at most 800 μm, at most 600 μm, at most 500 μm, at most 400 μm, or atmost 300 μm. The substrate referred to herein may be processed, beforeor after exposure, in for example a track (a tool that typically appliesa layer of resist to a substrate and develops the exposed resist).Properties of the substrate may be measured before or after exposure,for example in a metrology tool and/or an inspection tool.

In an embodiment, a resist layer is provided on the substrate. In anembodiment, the substrate is a wafer, for instance a semiconductorwafer. In an embodiment, the wafer material is selected from the groupconsisting of Si, SiGe, SiGeC, SiC, Ge, GaAs, InP, and InAs. In anembodiment, the wafer is a III/V compound semiconductor wafer. In anembodiment, the wafer is a silicon wafer. In an embodiment, thesubstrate is a ceramic substrate. In an embodiment, the substrate is aglass substrate. Glass substrates may be useful, e.g., in themanufacture of flat panel displays and liquid crystal display panels. Inan embodiment, the substrate is a plastic substrate. In an embodiment,the substrate is transparent (for the naked human eye). In anembodiment, the substrate is colored. In an embodiment, the substrate isabsent a color.

While, in an embodiment, the patterning device 104 is described and/ordepicted as being above the substrate 114, it may instead oradditionally be located under the substrate 114. Further, in anembodiment, the patterning device 104 and the substrate 114 may be sideby side, e.g., the patterning device 104 and substrate 114 extendvertically and the pattern is projected horizontally. In an embodiment,a patterning device 104 is provided to expose at least two oppositesides of a substrate 114. For example, there may be at least twopatterning devices 104, at least on each respective opposing side of thesubstrate 114, to expose those sides. In an embodiment, there may be asingle patterning device 104 to project one side of the substrate 114and appropriate optics (e.g., beam directing mirrors) to project apattern from the single patterning device 104 onto another side of thesubstrate 114.

While specific embodiments of the invention have been described above,it will be appreciated that the invention may be practiced otherwisethan as described. For example, the invention may take the form of acomputer program containing one or more sequences of machine-readableinstructions describing a method as disclosed above, or a data storagemedium (e.g. semiconductor memory, magnetic or optical disk) having sucha computer program stored therein.

Moreover, although this invention has been disclosed in the context ofcertain embodiments and examples, it will be understood by those skilledin the art that the present invention extends beyond the specificallydisclosed embodiments to other alternative embodiments and/or uses ofthe invention and obvious modifications and equivalents thereof. Inaddition, while a number of variations of the invention have been shownand described in detail, other modifications, which are within the scopeof this invention, will be readily apparent to those of skill in the artbased upon this disclosure. For example, it is contemplated that variouscombination or sub-combinations of the specific features and aspects ofthe embodiments may be made and still fall within the scope of theinvention. Accordingly, it should be understood that various featuresand aspects of the disclosed embodiments can be combined with orsubstituted for one another in order to form varying modes of thedisclosed invention. For example, in an embodiment, the movableindividually controllable elements embodiment of FIG. 5 may be combinedwith a non-movable array of individually controllable elements, forexample, to provide or have a back-up system.

Thus, while various embodiments of the present invention have beendescribed above, it should be understood that they have been presentedby way of example only, and not limitation. It will be apparent topersons skilled in the relevant art that various changes in form anddetail can be made therein without departing from the spirit and scopeof the invention. Thus, the breadth and scope of the present inventionshould not be limited by any of the above-described exemplaryembodiments, but should be defined only in accordance with the claimsand their equivalents.

What is claimed is:
 1. An apparatus comprising: an optical columncapable of projecting a beam on a target portion of a substrate, theoptical column comprising a projection system configured to project thebeam onto the target portion; a scanning movement actuator to move thesubstrate with a scanning speed in a scanning direction with respect tothe optical column; and a rotating movement actuator to rotate theoptical column or a part thereof with a rotating frequency resulting ina tangential rotation speed of the beam on the target portion, whereinthe target portion has a height in the scanning direction and atangential width mainly perpendicular to the scanning direction, whereinthe scanning speed divided by the height substantially corresponds withthe tangential rotation speed of the beam divided by the tangentialwidth.
 2. The apparatus of claim 1, wherein the rotating frequency ofthe rotatable column or part thereof is selected from the range of 2500to 10000 rpm.
 3. The apparatus of claim 1, wherein the optical columncomprises a self-emissive contrast device configured to emit the beam.4. The apparatus of claim 3, wherein the self-emissive contrast deviceis mounted on a stationary part of the optical column.
 5. The apparatusof claim 3, wherein the optical column comprises multiple self-emissivecontrast devices arranged with a radial pitch.
 6. The apparatus of claim5, wherein the number of self-emissive contrast devices per opticalcolumn is selected from the range of 2 to
 40. 7. The apparatus of claim5, wherein the radial pitch, at the projection image plane on thesubstrate, is selected from the range of 50% to 95% of a projectionresolution of the apparatus.
 8. The apparatus of claim 7, wherein theprojection resolution is smaller than or equal to 10 μm.
 9. Theapparatus of claim 1, wherein the radius of a central axis of theoptical column comprising lenses is selected from the range of 50 to 500mm.
 10. The apparatus of claim 1, wherein the tangential rotation speedof the beam on the target portion is selected from the range of 25 to400 m/s.
 11. The apparatus of claim 1, wherein the tangential width ofthe target portion is selected from the range of 5 to 40 mm.
 12. Theapparatus of claim 1, comprising multiple optical columns, each opticalcolumn having one or more self-emissive contrast devices configured toproject a beam on a respective target portion, the respective targetportions of the multiple optical columns being spaced in a directionperpendicular to the scanning direction.
 13. The apparatus of claim 12,wherein the respective target portions cover the dimension of thesubstrate in the direction perpendicular to the scanning direction. 14.The apparatus of claim 1, comprising multiple rotatable optical columnsor parts thereof.
 15. A device manufacturing method comprising:projecting a beam on a target portion of a substrate using an opticalcolumn, the optical column comprising a projection system configured toproject the beam onto the target portion; moving the substrate with ascanning speed in a scanning direction with respect to the opticalcolumn; and rotating the optical column or a part thereof with arotating frequency resulting in a tangential rotation speed of the beamon the target portion, wherein the target portion has a height in thescanning direction and a tangential width mainly perpendicular to thescanning direction, wherein the scanning speed divided by the heightsubstantially corresponds with the tangential rotation speed of the beamdivided by the tangential width.
 16. The method of claim 15, wherein theradius of a central axis of the optical column comprising lenses isselected from the range of 50 to 500 mm.
 17. The method of claim 15,wherein the tangential rotation speed of the beam on the target portionis selected from the range of 25 to 400 m/s.
 18. The method of claim 15,wherein the tangential width of the target portion is selected from therange of 5 to 40 mm.
 19. The method of claim 15, wherein the opticalcolumn comprises multiple self-emissive contrast devices arranged with aradial pitch, the radial pitch, at the projection image plane on thesubstrate, is selected from the range of 50% to 95% of a projectionresolution of the apparatus.
 20. The method of claim 15, comprisingprojecting a beam onto a plurality of target portions, wherein thetarget portions in the scanning direction and/or in the directionperpendicular to the scanning direction partially overlap.